Low noise amplifier for wireless local area network (WLAN) using two different microstrips laminates / Fadzilah Ainon Md. Akhir
This project describes the design and simulation of a low noise amplifier (LNA) for wireless local area network (WLAN) at the frequency of 2.5 GHz using the transistor low noise L to Ku-Band GaAs MESFET (NE76038). The circuit of LNA has been simulated using two different microstrips laminates with e...
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| Format: | Thesis |
| Language: | English |
| Published: |
2007
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| Subjects: | |
| Online Access: | https://ir.uitm.edu.my/id/eprint/69162/1/69162.pdf |
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| Summary: | This project describes the design and simulation of a low noise amplifier (LNA) for wireless local area network (WLAN) at the frequency of 2.5 GHz using the transistor low noise L to Ku-Band GaAs MESFET (NE76038). The circuit of LNA has been simulated using two different microstrips laminates with er = 3.48 (RO4350B) and er = 2.94 (RT/DUROID 6002) by using Genesys software and several calculation techniques using EESof Libra. Both amplifier are designed with the following specifications; the RoUets Stability Factor, k is stable on both microstrips laminates by using resistor 30 Q, gain, S21 greater than 10 dB with 100 MHz bandwidth, noise figure smaller than 3 dB and voltage standing wave ratio (VSWR) between 1.5-2.5. Both are compared to determine which microstrips laminates contribute to better performance for the LNA. |
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