Fabrication of porous silicon nanostuctures chemical sensor / Mohd Husairi Fadzilah Suhaimi

Porous Silicon Nanostructures (PSiN) was prepared by electrochemical etching using ptype Si wafer substrate with constant current density, 20 mA/cm2. Ethanoic hydrofluoric acid (HF) 48% electrolyte and ethanol (C2H5OH) at ratio 1:1 electrolyte was used. The sample was characterized by using Photolum...

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Main Author: Fadzilah Suhaimi, Mohd Husairi
Format: Thesis
Language:English
Published: 2010
Online Access:https://ir.uitm.edu.my/id/eprint/72745/1/72745.pdf
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spelling my-uitm-ir.727452024-05-29T09:28:27Z Fabrication of porous silicon nanostuctures chemical sensor / Mohd Husairi Fadzilah Suhaimi 2010 Fadzilah Suhaimi, Mohd Husairi Porous Silicon Nanostructures (PSiN) was prepared by electrochemical etching using ptype Si wafer substrate with constant current density, 20 mA/cm2. Ethanoic hydrofluoric acid (HF) 48% electrolyte and ethanol (C2H5OH) at ratio 1:1 electrolyte was used. The sample was characterized by using Photoluminescence (PL) spectrum. Porous silicon nanostructures (PSiN) chemical sensor was fabricated by using sputtering technique (gold) to prepare metal contact. This metal was being prepared on the samples as an electrode of sensor and increase sensitivity of sensor. Finally, sample was tested with potassium phosphate (K2HO4) at different concentration under I-Vsystem. The result shows that when the potassium phosphate diffuses into a pore, the resistance of porous silicon nanostructures (PSiN) was decreased drastically at about 81.82%. It was also found that the resistance became stable at certain point after solution dropped. Resistance (average) of PSiN decrease with increase of chemical solution concentration dropped. So it concluded that the porous silicon nanostructures sensor is able to detecting the chemical solution. 2010 Thesis https://ir.uitm.edu.my/id/eprint/72745/ https://ir.uitm.edu.my/id/eprint/72745/1/72745.pdf text en public degree Universiti Teknologi MARA (UiTM) Faculty of Applied Sciences Abdullah, Saifollah
institution Universiti Teknologi MARA
collection UiTM Institutional Repository
language English
advisor Abdullah, Saifollah
description Porous Silicon Nanostructures (PSiN) was prepared by electrochemical etching using ptype Si wafer substrate with constant current density, 20 mA/cm2. Ethanoic hydrofluoric acid (HF) 48% electrolyte and ethanol (C2H5OH) at ratio 1:1 electrolyte was used. The sample was characterized by using Photoluminescence (PL) spectrum. Porous silicon nanostructures (PSiN) chemical sensor was fabricated by using sputtering technique (gold) to prepare metal contact. This metal was being prepared on the samples as an electrode of sensor and increase sensitivity of sensor. Finally, sample was tested with potassium phosphate (K2HO4) at different concentration under I-Vsystem. The result shows that when the potassium phosphate diffuses into a pore, the resistance of porous silicon nanostructures (PSiN) was decreased drastically at about 81.82%. It was also found that the resistance became stable at certain point after solution dropped. Resistance (average) of PSiN decrease with increase of chemical solution concentration dropped. So it concluded that the porous silicon nanostructures sensor is able to detecting the chemical solution.
format Thesis
qualification_level Bachelor degree
author Fadzilah Suhaimi, Mohd Husairi
spellingShingle Fadzilah Suhaimi, Mohd Husairi
Fabrication of porous silicon nanostuctures chemical sensor / Mohd Husairi Fadzilah Suhaimi
author_facet Fadzilah Suhaimi, Mohd Husairi
author_sort Fadzilah Suhaimi, Mohd Husairi
title Fabrication of porous silicon nanostuctures chemical sensor / Mohd Husairi Fadzilah Suhaimi
title_short Fabrication of porous silicon nanostuctures chemical sensor / Mohd Husairi Fadzilah Suhaimi
title_full Fabrication of porous silicon nanostuctures chemical sensor / Mohd Husairi Fadzilah Suhaimi
title_fullStr Fabrication of porous silicon nanostuctures chemical sensor / Mohd Husairi Fadzilah Suhaimi
title_full_unstemmed Fabrication of porous silicon nanostuctures chemical sensor / Mohd Husairi Fadzilah Suhaimi
title_sort fabrication of porous silicon nanostuctures chemical sensor / mohd husairi fadzilah suhaimi
granting_institution Universiti Teknologi MARA (UiTM)
granting_department Faculty of Applied Sciences
publishDate 2010
url https://ir.uitm.edu.my/id/eprint/72745/1/72745.pdf
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