Third order symmetrical microstrip dual-behaviour resonator filter at 6GHz / Ahmad Farhan Ahmad
This paper is aimed on the design of microstrip dual-behaviour resonator (DBR) filter. The design is a third order filter developed at the center frequency 6 GHz. The bandwidth of the dual-behaviour resonator filter is 7%. Dual-behavior resonators (DBRs) are based on the parallel association of two...
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my-uitm-ir.808652023-11-09T02:12:11Z Third order symmetrical microstrip dual-behaviour resonator filter at 6GHz / Ahmad Farhan Ahmad 2010 Ahmad, Ahmad Farhan Radio frequency Dielectric devices This paper is aimed on the design of microstrip dual-behaviour resonator (DBR) filter. The design is a third order filter developed at the center frequency 6 GHz. The bandwidth of the dual-behaviour resonator filter is 7%. Dual-behavior resonators (DBRs) are based on the parallel association of two different bandstop structures, which implies a constructive recombination. This filter is design by using relative permittivity, cr =5.4 and substrate thickness, h= l .6mm. Simulations are proposed throughout the paper to illustrate the various possibilities offered by the concept. Experimental results in microstrip technology are also presented in order to validate the idea. 2010 Thesis https://ir.uitm.edu.my/id/eprint/80865/ https://ir.uitm.edu.my/id/eprint/80865/1/80865.pdf text en public degree Universiti Teknologi MARA (UiTM) Faculty of Electrical Engineering Mohd Salleh, Mohd Khairul |
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Universiti Teknologi MARA |
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UiTM Institutional Repository |
language |
English |
advisor |
Mohd Salleh, Mohd Khairul |
topic |
Radio frequency Dielectric devices |
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Radio frequency Dielectric devices Ahmad, Ahmad Farhan Third order symmetrical microstrip dual-behaviour resonator filter at 6GHz / Ahmad Farhan Ahmad |
description |
This paper is aimed on the design of microstrip dual-behaviour resonator (DBR) filter. The design is a third order filter developed at the center frequency 6 GHz. The bandwidth of the dual-behaviour resonator filter is 7%. Dual-behavior resonators (DBRs) are based on the parallel association of two different bandstop structures, which implies a constructive recombination. This filter is design by using relative permittivity, cr =5.4 and substrate thickness, h= l .6mm. Simulations are proposed throughout the paper to illustrate the various possibilities offered by the concept. Experimental results in microstrip technology are also presented in order to validate the idea. |
format |
Thesis |
qualification_level |
Bachelor degree |
author |
Ahmad, Ahmad Farhan |
author_facet |
Ahmad, Ahmad Farhan |
author_sort |
Ahmad, Ahmad Farhan |
title |
Third order symmetrical microstrip dual-behaviour resonator filter at 6GHz / Ahmad Farhan Ahmad |
title_short |
Third order symmetrical microstrip dual-behaviour resonator filter at 6GHz / Ahmad Farhan Ahmad |
title_full |
Third order symmetrical microstrip dual-behaviour resonator filter at 6GHz / Ahmad Farhan Ahmad |
title_fullStr |
Third order symmetrical microstrip dual-behaviour resonator filter at 6GHz / Ahmad Farhan Ahmad |
title_full_unstemmed |
Third order symmetrical microstrip dual-behaviour resonator filter at 6GHz / Ahmad Farhan Ahmad |
title_sort |
third order symmetrical microstrip dual-behaviour resonator filter at 6ghz / ahmad farhan ahmad |
granting_institution |
Universiti Teknologi MARA (UiTM) |
granting_department |
Faculty of Electrical Engineering |
publishDate |
2010 |
url |
https://ir.uitm.edu.my/id/eprint/80865/1/80865.pdf |
_version_ |
1783736315543552000 |