Tunable high speed pulse generator for Phase Change Memory (PCM) using 0.13um technology / Munirah Rasin
This project presents a tunable high speed pulse generator for Phase Change Memory (PCM) using 0.13um technology. The promising candidates for the next generation memory device is PCM with high speed, high performance and low production cost which are the major issues in the semiconductor industry....
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| 主要作者: | |
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| 格式: | Thesis |
| 語言: | English |
| 出版: |
2015
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| 主題: | |
| 在線閱讀: | https://ir.uitm.edu.my/id/eprint/98384/1/98384.PDF |
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| 總結: | This project presents a tunable high speed pulse generator for Phase Change Memory (PCM) using 0.13um technology. The promising candidates for the next generation memory device is PCM with high speed, high performance and low production cost which are the major issues in the semiconductor industry. A pulse generator is needed to induce pulses into PCM to give enough supply for it to change state from amorphous to crystalline. The conventional pulse generator has a large internal resistance that limits the accuracy of the generated pulse. To overcome this problem, an integrated tunable high speed pulse generator is needed. In this project, a tunable high speed pulse generator will be design by varying the RC delay circuit to have adjustable pulse width. The proposed tunable high speed pulse generator circuit composed of a timer circuit and RC delay circuit. The width of the generated pulse can be tuned by varying resistor value in the RC delay circuit. The tunable high speed pulse generator will be design using 0.13 um technology. The proposed design is purposely designed for Phase Change Memory to change state from amorphous to crystalline that required pulse width input ranging of lOOus - 100ns |
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