Tunable high speed pulse generator for Phase Change Memory (PCM) using 0.13um technology / Munirah Rasin

This project presents a tunable high speed pulse generator for Phase Change Memory (PCM) using 0.13um technology. The promising candidates for the next generation memory device is PCM with high speed, high performance and low production cost which are the major issues in the semiconductor industry....

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Main Author:	Rasin, Munirah
Format:	Thesis
Language:	English
Published:	2015
Subjects:	TA Engineering Civil engineering
Online Access:	https://ir.uitm.edu.my/id/eprint/98384/1/98384.PDF
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id	my-uitm-ir.98384
record_format	uketd_dc
spelling	my-uitm-ir.983842024-08-04T15:19:54Z Tunable high speed pulse generator for Phase Change Memory (PCM) using 0.13um technology / Munirah Rasin 2015 Rasin, Munirah TA Engineering. Civil engineering This project presents a tunable high speed pulse generator for Phase Change Memory (PCM) using 0.13um technology. The promising candidates for the next generation memory device is PCM with high speed, high performance and low production cost which are the major issues in the semiconductor industry. A pulse generator is needed to induce pulses into PCM to give enough supply for it to change state from amorphous to crystalline. The conventional pulse generator has a large internal resistance that limits the accuracy of the generated pulse. To overcome this problem, an integrated tunable high speed pulse generator is needed. In this project, a tunable high speed pulse generator will be design by varying the RC delay circuit to have adjustable pulse width. The proposed tunable high speed pulse generator circuit composed of a timer circuit and RC delay circuit. The width of the generated pulse can be tuned by varying resistor value in the RC delay circuit. The tunable high speed pulse generator will be design using 0.13 um technology. The proposed design is purposely designed for Phase Change Memory to change state from amorphous to crystalline that required pulse width input ranging of lOOus - 100ns 2015 Thesis https://ir.uitm.edu.my/id/eprint/98384/ https://ir.uitm.edu.my/id/eprint/98384/1/98384.PDF text en public degree Universiti Teknologi MARA (UiTM) Faculty of Electrical Engineering
institution	Universiti Teknologi MARA
collection	UiTM Institutional Repository
language	English
topic	TA Engineering Civil engineering
spellingShingle	TA Engineering Civil engineering Rasin, Munirah Tunable high speed pulse generator for Phase Change Memory (PCM) using 0.13um technology / Munirah Rasin
description	This project presents a tunable high speed pulse generator for Phase Change Memory (PCM) using 0.13um technology. The promising candidates for the next generation memory device is PCM with high speed, high performance and low production cost which are the major issues in the semiconductor industry. A pulse generator is needed to induce pulses into PCM to give enough supply for it to change state from amorphous to crystalline. The conventional pulse generator has a large internal resistance that limits the accuracy of the generated pulse. To overcome this problem, an integrated tunable high speed pulse generator is needed. In this project, a tunable high speed pulse generator will be design by varying the RC delay circuit to have adjustable pulse width. The proposed tunable high speed pulse generator circuit composed of a timer circuit and RC delay circuit. The width of the generated pulse can be tuned by varying resistor value in the RC delay circuit. The tunable high speed pulse generator will be design using 0.13 um technology. The proposed design is purposely designed for Phase Change Memory to change state from amorphous to crystalline that required pulse width input ranging of lOOus - 100ns
format	Thesis
qualification_level	Bachelor degree
author	Rasin, Munirah
author_facet	Rasin, Munirah
author_sort	Rasin, Munirah
title	Tunable high speed pulse generator for Phase Change Memory (PCM) using 0.13um technology / Munirah Rasin
title_short	Tunable high speed pulse generator for Phase Change Memory (PCM) using 0.13um technology / Munirah Rasin
title_full	Tunable high speed pulse generator for Phase Change Memory (PCM) using 0.13um technology / Munirah Rasin
title_fullStr	Tunable high speed pulse generator for Phase Change Memory (PCM) using 0.13um technology / Munirah Rasin
title_full_unstemmed	Tunable high speed pulse generator for Phase Change Memory (PCM) using 0.13um technology / Munirah Rasin
title_sort	tunable high speed pulse generator for phase change memory (pcm) using 0.13um technology / munirah rasin
granting_institution	Universiti Teknologi MARA (UiTM)
granting_department	Faculty of Electrical Engineering
publishDate	2015
url	https://ir.uitm.edu.my/id/eprint/98384/1/98384.PDF
_version_	1811768912059039744

Tunable high speed pulse generator for Phase Change Memory (PCM) using 0.13um technology / Munirah Rasin

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