Tunable high speed pulse generator for Phase Change Memory (PCM) using 0.13um technology / Munirah Rasin

This project presents a tunable high speed pulse generator for Phase Change Memory (PCM) using 0.13um technology. The promising candidates for the next generation memory device is PCM with high speed, high performance and low production cost which are the major issues in the semiconductor industry....

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Main Author: Rasin, Munirah
Format: Thesis
Language:English
Published: 2015
Subjects:
Online Access:https://ir.uitm.edu.my/id/eprint/98384/1/98384.PDF
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spelling my-uitm-ir.983842024-08-04T15:19:54Z Tunable high speed pulse generator for Phase Change Memory (PCM) using 0.13um technology / Munirah Rasin 2015 Rasin, Munirah TA Engineering. Civil engineering This project presents a tunable high speed pulse generator for Phase Change Memory (PCM) using 0.13um technology. The promising candidates for the next generation memory device is PCM with high speed, high performance and low production cost which are the major issues in the semiconductor industry. A pulse generator is needed to induce pulses into PCM to give enough supply for it to change state from amorphous to crystalline. The conventional pulse generator has a large internal resistance that limits the accuracy of the generated pulse. To overcome this problem, an integrated tunable high speed pulse generator is needed. In this project, a tunable high speed pulse generator will be design by varying the RC delay circuit to have adjustable pulse width. The proposed tunable high speed pulse generator circuit composed of a timer circuit and RC delay circuit. The width of the generated pulse can be tuned by varying resistor value in the RC delay circuit. The tunable high speed pulse generator will be design using 0.13 um technology. The proposed design is purposely designed for Phase Change Memory to change state from amorphous to crystalline that required pulse width input ranging of lOOus - 100ns 2015 Thesis https://ir.uitm.edu.my/id/eprint/98384/ https://ir.uitm.edu.my/id/eprint/98384/1/98384.PDF text en public degree Universiti Teknologi MARA (UiTM) Faculty of Electrical Engineering
institution Universiti Teknologi MARA
collection UiTM Institutional Repository
language English
topic TA Engineering
Civil engineering
spellingShingle TA Engineering
Civil engineering
Rasin, Munirah
Tunable high speed pulse generator for Phase Change Memory (PCM) using 0.13um technology / Munirah Rasin
description This project presents a tunable high speed pulse generator for Phase Change Memory (PCM) using 0.13um technology. The promising candidates for the next generation memory device is PCM with high speed, high performance and low production cost which are the major issues in the semiconductor industry. A pulse generator is needed to induce pulses into PCM to give enough supply for it to change state from amorphous to crystalline. The conventional pulse generator has a large internal resistance that limits the accuracy of the generated pulse. To overcome this problem, an integrated tunable high speed pulse generator is needed. In this project, a tunable high speed pulse generator will be design by varying the RC delay circuit to have adjustable pulse width. The proposed tunable high speed pulse generator circuit composed of a timer circuit and RC delay circuit. The width of the generated pulse can be tuned by varying resistor value in the RC delay circuit. The tunable high speed pulse generator will be design using 0.13 um technology. The proposed design is purposely designed for Phase Change Memory to change state from amorphous to crystalline that required pulse width input ranging of lOOus - 100ns
format Thesis
qualification_level Bachelor degree
author Rasin, Munirah
author_facet Rasin, Munirah
author_sort Rasin, Munirah
title Tunable high speed pulse generator for Phase Change Memory (PCM) using 0.13um technology / Munirah Rasin
title_short Tunable high speed pulse generator for Phase Change Memory (PCM) using 0.13um technology / Munirah Rasin
title_full Tunable high speed pulse generator for Phase Change Memory (PCM) using 0.13um technology / Munirah Rasin
title_fullStr Tunable high speed pulse generator for Phase Change Memory (PCM) using 0.13um technology / Munirah Rasin
title_full_unstemmed Tunable high speed pulse generator for Phase Change Memory (PCM) using 0.13um technology / Munirah Rasin
title_sort tunable high speed pulse generator for phase change memory (pcm) using 0.13um technology / munirah rasin
granting_institution Universiti Teknologi MARA (UiTM)
granting_department Faculty of Electrical Engineering
publishDate 2015
url https://ir.uitm.edu.my/id/eprint/98384/1/98384.PDF
_version_ 1811768912059039744