Tunable high speed pulse generator for Phase Change Memory (PCM) using 0.13um technology / Munirah Rasin

Tunable high speed pulse generator for Phase Change Memory (PCM) using 0.13um technology / Munirah Rasin

This project presents a tunable high speed pulse generator for Phase Change Memory (PCM) using 0.13um technology. The promising candidates for the next generation memory device is PCM with high speed, high performance and low production cost which are the major issues in the semiconductor industry....

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書目詳細資料
主要作者:	Rasin, Munirah
格式:	Thesis
語言:	English
出版:	2015
主題:	TA Engineering Civil engineering
在線閱讀:	https://ir.uitm.edu.my/id/eprint/98384/1/98384.PDF
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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