Memristive behavior of Ti02 thin film by RF magnetron sputtering / Mohammad Mukhlis Ramly

This project is on the fabrication and electrical characteristic of a memristive device with titanium dioxide (Ti02) as an active layer on two different substrates which are silicon (Si) and glass. Bottom electrodes of 60nm thick platinum were grown on the substrates before the TiC>2 deposition....

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Main Author:	Ramly, Mohammad Mukhlis
Format:	Thesis
Language:	English
Published:	2012
Subjects:	TK Electrical engineering Electronics Nuclear engineering
Online Access:	https://ir.uitm.edu.my/id/eprint/98515/1/98515.pdf
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id	my-uitm-ir.98515
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spelling	my-uitm-ir.985152024-08-22T09:17:22Z Memristive behavior of Ti02 thin film by RF magnetron sputtering / Mohammad Mukhlis Ramly 2012 Ramly, Mohammad Mukhlis TK Electrical engineering. Electronics. Nuclear engineering This project is on the fabrication and electrical characteristic of a memristive device with titanium dioxide (Ti02) as an active layer on two different substrates which are silicon (Si) and glass. Bottom electrodes of 60nm thick platinum were grown on the substrates before the TiC>2 deposition. Two layers of TiC>2 thin films were grown on the bottom electrode by radio frequency (RF) magnetron sputtering forming a memristive device. The first set of sample is a layer of T1O2 deposited on silicon substrate and exposed to plasma before the deposition of the second layer. The plasma treatment time was varied; for 0 minutes, 5 minutes and 10 minutes. The second set of sample is a Ti02 layer deposited on glass substrates and being etched by 1% hydrofluoric (HF) before deposition the second layer. The etching time was varied; for 5 seconds and 7 seconds. Current-voltage (I-V) curves of the samples were taken from the voltage loop ranging 0V to -5V, -5V to 5V then back to 0V and also from - 5V to 5V then back to -5V to show the bias dependent switching characteristics that match the electrical behavior reported for memristor. The second set of sample (etching method) gives better memristive behavior compared to the first set of sample (plasma treatment method). Beside, second loops which were measured from -5V to 5V then back to -5V, gives batter memristive behavior with less noise compared to the first loop. 2012 Thesis https://ir.uitm.edu.my/id/eprint/98515/ https://ir.uitm.edu.my/id/eprint/98515/1/98515.pdf text en public degree Universiti Teknologi MARA (UiTM) Faculty of Electrical Engineering Herman, Sukreen Hana
institution	Universiti Teknologi MARA
collection	UiTM Institutional Repository
language	English
advisor	Herman, Sukreen Hana
topic	TK Electrical engineering Electronics Nuclear engineering
spellingShingle	TK Electrical engineering Electronics Nuclear engineering Ramly, Mohammad Mukhlis Memristive behavior of Ti02 thin film by RF magnetron sputtering / Mohammad Mukhlis Ramly
description	This project is on the fabrication and electrical characteristic of a memristive device with titanium dioxide (Ti02) as an active layer on two different substrates which are silicon (Si) and glass. Bottom electrodes of 60nm thick platinum were grown on the substrates before the TiC>2 deposition. Two layers of TiC>2 thin films were grown on the bottom electrode by radio frequency (RF) magnetron sputtering forming a memristive device. The first set of sample is a layer of T1O2 deposited on silicon substrate and exposed to plasma before the deposition of the second layer. The plasma treatment time was varied; for 0 minutes, 5 minutes and 10 minutes. The second set of sample is a Ti02 layer deposited on glass substrates and being etched by 1% hydrofluoric (HF) before deposition the second layer. The etching time was varied; for 5 seconds and 7 seconds. Current-voltage (I-V) curves of the samples were taken from the voltage loop ranging 0V to -5V, -5V to 5V then back to 0V and also from - 5V to 5V then back to -5V to show the bias dependent switching characteristics that match the electrical behavior reported for memristor. The second set of sample (etching method) gives better memristive behavior compared to the first set of sample (plasma treatment method). Beside, second loops which were measured from -5V to 5V then back to -5V, gives batter memristive behavior with less noise compared to the first loop.
format	Thesis
qualification_level	Bachelor degree
author	Ramly, Mohammad Mukhlis
author_facet	Ramly, Mohammad Mukhlis
author_sort	Ramly, Mohammad Mukhlis
title	Memristive behavior of Ti02 thin film by RF magnetron sputtering / Mohammad Mukhlis Ramly
title_short	Memristive behavior of Ti02 thin film by RF magnetron sputtering / Mohammad Mukhlis Ramly
title_full	Memristive behavior of Ti02 thin film by RF magnetron sputtering / Mohammad Mukhlis Ramly
title_fullStr	Memristive behavior of Ti02 thin film by RF magnetron sputtering / Mohammad Mukhlis Ramly
title_full_unstemmed	Memristive behavior of Ti02 thin film by RF magnetron sputtering / Mohammad Mukhlis Ramly
title_sort	memristive behavior of ti02 thin film by rf magnetron sputtering / mohammad mukhlis ramly
granting_institution	Universiti Teknologi MARA (UiTM)
granting_department	Faculty of Electrical Engineering
publishDate	2012
url	https://ir.uitm.edu.my/id/eprint/98515/1/98515.pdf
_version_	1811768928230178816

Memristive behavior of Ti02 thin film by RF magnetron sputtering / Mohammad Mukhlis Ramly

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