Characterization of 50nm NMOSFET / Aziddin Azman
This paper presents a detailed study of characteristic of 50nm MOSFET by using SILVACO TCAD tool. The gate length (L) is reducing into 50nm based on conventional 0.3µm NMOSFET. The result of performance between two structures is compared by using Atlas simulation. The analysis is focused on Id-Vg an...
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| Main Author: | |
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| Format: | Thesis |
| Language: | English |
| Published: |
2009
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| Subjects: | |
| Online Access: | https://ir.uitm.edu.my/id/eprint/98603/1/98603.pdf |
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| Summary: | This paper presents a detailed study of characteristic of 50nm MOSFET by using SILVACO TCAD tool. The gate length (L) is reducing into 50nm based on conventional 0.3µm NMOSFET. The result of performance between two structures is compared by using Atlas simulation. The analysis is focused on Id-Vg and Id-Vd characteristic on the two gate length as mentioned. ATHENA and ATLAS in SILVACO TCAD tool was used to construct and analyze the semiconductor device. The result has shown how the drain current increase steadily and improvement on threshold voltage by 50nm NMOS in comparison with 0.3µm technology. |
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