Characterization of 50nm NMOSFET / Aziddin Azman
This paper presents a detailed study of characteristic of 50nm MOSFET by using SILVACO TCAD tool. The gate length (L) is reducing into 50nm based on conventional 0.3µm NMOSFET. The result of performance between two structures is compared by using Atlas simulation. The analysis is focused on Id-Vg an...
Saved in:
Main Author: | Azman, Aziddin |
---|---|
Format: | Thesis |
Language: | English |
Published: |
2009
|
Subjects: | |
Online Access: | https://ir.uitm.edu.my/id/eprint/98603/1/98603.pdf |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
The effect of atmosphere conditions on performance of free space optics in Malaysia at 1310nm and 1550nm
by: Md. Ishak, Norizah
Published: (2010) -
Device simulation of the electrical characteristics in 14nm gaussian channel junctionless finfet
by: Ramakrishnan, Mathangi
Published: (2022) -
Performance analysis of 22NM FinFET-based 8T SRAM cell
by: Hasan Baseri, Nur Hasnifa
Published: (2018) -
Study Of Basic 22nm Transistor Technology On
Sequential Circuit Using Primetime
by: Nik Hassan, Nik Azman
Published: (2013) -
Optimization of progress parameters for lower leakage current in 10 NM finfet using taguchi method
by: Loy, Ying Ting
Published: (2020)