Photoresponse characteristics of aluminium doped zinc oxide nanostructure thin films / Mohd Nasron Masri

The wide band gap semiconductor of zinc oxide (ZnO) has emerged as a potential material for the fabrication of a range of devices including opto-electronic devices such as light - emitting diodes (LEDs), laser diodes (LDs) and detectors. The goal of this research to achieve the photoresponse charact...

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Main Author:	Masri, Mohd Nasron
Format:	Thesis
Language:	English
Published:	2010
Subjects:	Nanostructured materials Apparatus and materials
Online Access:	https://ir.uitm.edu.my/id/eprint/98844/1/98844.pdf
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id	my-uitm-ir.98844
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spelling	my-uitm-ir.988442024-08-18T03:15:07Z Photoresponse characteristics of aluminium doped zinc oxide nanostructure thin films / Mohd Nasron Masri 2010 Masri, Mohd Nasron Nanostructured materials Apparatus and materials The wide band gap semiconductor of zinc oxide (ZnO) has emerged as a potential material for the fabrication of a range of devices including opto-electronic devices such as light - emitting diodes (LEDs), laser diodes (LDs) and detectors. The goal of this research to achieve the photoresponse characteristic of Al doped ZnO thin films. The thin films of ZnO was doping with different Al concentration using sol-gel method. Dipcoating technique was applied to deposit the glass substrate dip into the ZnO solution. The thin films were dip five times and the preheating temperature at 200°C. All the dipping parameter was fixed and the molar concentration of Al were varies at 1at.%, 3at.%, 5at.%, 7at.% and 9at.%. The thin films were annealed for 1 hour before characterization process. The influence of doping concentration of aluminum on the surface morphologies was characterized by Scanning Electron Microscopy (SEM). The electrical properties of thin films were characterized using 2-probe Current-Voltage (I-V) measurement system (Advantest R6243). The optical properties were studied using UVVis-NIR spectrometer. The as prepared ZnO nanostructure thin films layers have a grain structure and show a comparably low photocurrent magnitude under dark to illumination. The results show that higher conductivity found under illumination. Al doping concentration proportional increased with electrical conductivity. 2010 Thesis https://ir.uitm.edu.my/id/eprint/98844/ https://ir.uitm.edu.my/id/eprint/98844/1/98844.pdf text en public degree Universiti Teknologi MARA (UiTM) Faculty of Electrical Engineering Abdul Aziz, Anees
institution	Universiti Teknologi MARA
collection	UiTM Institutional Repository
language	English
advisor	Abdul Aziz, Anees
topic	Nanostructured materials Apparatus and materials
spellingShingle	Nanostructured materials Apparatus and materials Masri, Mohd Nasron Photoresponse characteristics of aluminium doped zinc oxide nanostructure thin films / Mohd Nasron Masri
description	The wide band gap semiconductor of zinc oxide (ZnO) has emerged as a potential material for the fabrication of a range of devices including opto-electronic devices such as light - emitting diodes (LEDs), laser diodes (LDs) and detectors. The goal of this research to achieve the photoresponse characteristic of Al doped ZnO thin films. The thin films of ZnO was doping with different Al concentration using sol-gel method. Dipcoating technique was applied to deposit the glass substrate dip into the ZnO solution. The thin films were dip five times and the preheating temperature at 200°C. All the dipping parameter was fixed and the molar concentration of Al were varies at 1at.%, 3at.%, 5at.%, 7at.% and 9at.%. The thin films were annealed for 1 hour before characterization process. The influence of doping concentration of aluminum on the surface morphologies was characterized by Scanning Electron Microscopy (SEM). The electrical properties of thin films were characterized using 2-probe Current-Voltage (I-V) measurement system (Advantest R6243). The optical properties were studied using UVVis-NIR spectrometer. The as prepared ZnO nanostructure thin films layers have a grain structure and show a comparably low photocurrent magnitude under dark to illumination. The results show that higher conductivity found under illumination. Al doping concentration proportional increased with electrical conductivity.
format	Thesis
qualification_level	Bachelor degree
author	Masri, Mohd Nasron
author_facet	Masri, Mohd Nasron
author_sort	Masri, Mohd Nasron
title	Photoresponse characteristics of aluminium doped zinc oxide nanostructure thin films / Mohd Nasron Masri
title_short	Photoresponse characteristics of aluminium doped zinc oxide nanostructure thin films / Mohd Nasron Masri
title_full	Photoresponse characteristics of aluminium doped zinc oxide nanostructure thin films / Mohd Nasron Masri
title_fullStr	Photoresponse characteristics of aluminium doped zinc oxide nanostructure thin films / Mohd Nasron Masri
title_full_unstemmed	Photoresponse characteristics of aluminium doped zinc oxide nanostructure thin films / Mohd Nasron Masri
title_sort	photoresponse characteristics of aluminium doped zinc oxide nanostructure thin films / mohd nasron masri
granting_institution	Universiti Teknologi MARA (UiTM)
granting_department	Faculty of Electrical Engineering
publishDate	2010
url	https://ir.uitm.edu.my/id/eprint/98844/1/98844.pdf
_version_	1811768963764322304

Photoresponse characteristics of aluminium doped zinc oxide nanostructure thin films / Mohd Nasron Masri

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