Ohmic contact formation of gallium nitride and electrical properties improvement

In this chapter, in order to improve the electrical conduction of Mg-doped p-type GaN contacts, enhancement of hydrogen release from GaN substrates is attempted. The electrical conduction profiles of the p-type GaN/Ni contact annealed at 573 K and 673 K for 3600 s while subjected to current flow sho...

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Main Author:	Aiman, Mohd Halil
Format:	Thesis
Language:	English
Published:	2016
Subjects:	TK Electrical engineering Electronics Nuclear engineering
Online Access:	http://umpir.ump.edu.my/id/eprint/16957/19/Ohmic%20contact%20formation%20of%20gallium%20nitride%20and%20electrical%20properties%20improvement.pdf
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id	my-ump-ir.16957
record_format	uketd_dc
spelling	my-ump-ir.169572021-12-01T00:25:44Z Ohmic contact formation of gallium nitride and electrical properties improvement 2016 Aiman, Mohd Halil TK Electrical engineering. Electronics Nuclear engineering In this chapter, in order to improve the electrical conduction of Mg-doped p-type GaN contacts, enhancement of hydrogen release from GaN substrates is attempted. The electrical conduction profiles of the p-type GaN/Ni contact annealed at 573 K and 673 K for 3600 s while subjected to current flow show some improvement compared to the contact annealed without applying the current flow. From these results, it can be understood that by applying current flow through the GaN substrates during annealing process, hydrogen release form GaN substrates can be enhanced by even annealing at low temperature. To understand the mechanism of hydrogen release by applying current flow during annealing, the change in current values p-type GaN contacts during annealing has been observed. By using regression analysis and kinetic model, the electrical conduction improvement achieve by applying current flow through GaN substrate during annealing have been analysis. The results suggest that that by applying current flow during annealing and by forming a contact with material that H can diffuse into such as Pd, the H release from GaN substrate can be enhanced and the electrical conduction of p-type GaN contact can be significantly improved. 2016 Thesis http://umpir.ump.edu.my/id/eprint/16957/ http://umpir.ump.edu.my/id/eprint/16957/19/Ohmic%20contact%20formation%20of%20gallium%20nitride%20and%20electrical%20properties%20improvement.pdf pdf en public phd doctoral Universiti Malaysia Pahang Faculty of Electrical & Electronic Engineering
institution	Universiti Malaysia Pahang Al-Sultan Abdullah
collection	UMPSA Institutional Repository
language	English
topic	TK Electrical engineering Electronics Nuclear engineering
spellingShingle	TK Electrical engineering Electronics Nuclear engineering Aiman, Mohd Halil Ohmic contact formation of gallium nitride and electrical properties improvement
description	In this chapter, in order to improve the electrical conduction of Mg-doped p-type GaN contacts, enhancement of hydrogen release from GaN substrates is attempted. The electrical conduction profiles of the p-type GaN/Ni contact annealed at 573 K and 673 K for 3600 s while subjected to current flow show some improvement compared to the contact annealed without applying the current flow. From these results, it can be understood that by applying current flow through the GaN substrates during annealing process, hydrogen release form GaN substrates can be enhanced by even annealing at low temperature. To understand the mechanism of hydrogen release by applying current flow during annealing, the change in current values p-type GaN contacts during annealing has been observed. By using regression analysis and kinetic model, the electrical conduction improvement achieve by applying current flow through GaN substrate during annealing have been analysis. The results suggest that that by applying current flow during annealing and by forming a contact with material that H can diffuse into such as Pd, the H release from GaN substrate can be enhanced and the electrical conduction of p-type GaN contact can be significantly improved.
format	Thesis
qualification_name	Doctor of Philosophy (PhD.)
qualification_level	Doctorate
author	Aiman, Mohd Halil
author_facet	Aiman, Mohd Halil
author_sort	Aiman, Mohd Halil
title	Ohmic contact formation of gallium nitride and electrical properties improvement
title_short	Ohmic contact formation of gallium nitride and electrical properties improvement
title_full	Ohmic contact formation of gallium nitride and electrical properties improvement
title_fullStr	Ohmic contact formation of gallium nitride and electrical properties improvement
title_full_unstemmed	Ohmic contact formation of gallium nitride and electrical properties improvement
title_sort	ohmic contact formation of gallium nitride and electrical properties improvement
granting_institution	Universiti Malaysia Pahang
granting_department	Faculty of Electrical & Electronic Engineering
publishDate	2016
url	http://umpir.ump.edu.my/id/eprint/16957/19/Ohmic%20contact%20formation%20of%20gallium%20nitride%20and%20electrical%20properties%20improvement.pdf
_version_	1783732018035556352

Ohmic contact formation of gallium nitride and electrical properties improvement

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