Ohmic contact formation of gallium nitride and electrical properties improvement
In this chapter, in order to improve the electrical conduction of Mg-doped p-type GaN contacts, enhancement of hydrogen release from GaN substrates is attempted. The electrical conduction profiles of the p-type GaN/Ni contact annealed at 573 K and 673 K for 3600 s while subjected to current flow sho...
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| 格式: | Thesis |
| 语言: | English |
| 出版: |
2016
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| 主题: | |
| 在线阅读: | http://umpir.ump.edu.my/id/eprint/16957/19/Ohmic%20contact%20formation%20of%20gallium%20nitride%20and%20electrical%20properties%20improvement.pdf |
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