Modelling and switching simulation of gate turn-off thyristor using finite element method

The gate turn-off (GTO) thyristor has the best voltage blocking and current conducting capabilities among all known high power semiconductor switching devices. The switching characteristics of a GTO thyristor are influenced by doping profile, material properties, lifetime and mobility of holes an...

Full description

Saved in:

Bibliographic Details
Main Author:	Norainon, Mohamed
Format:	Thesis
Language:	English
Published:	2010
Subjects:	TK Electrical engineering Electronics Nuclear engineering
Online Access:	http://umpir.ump.edu.my/id/eprint/2187/1/NORAINON_MOHAMED.PDF
Tags:	Add Tag No Tags, Be the first to tag this record!

id	my-ump-ir.2187
record_format	uketd_dc
spelling	my-ump-ir.21872015-03-03T07:55:05Z Modelling and switching simulation of gate turn-off thyristor using finite element method 2010-05 Norainon, Mohamed TK Electrical engineering. Electronics Nuclear engineering The gate turn-off (GTO) thyristor has the best voltage blocking and current conducting capabilities among all known high power semiconductor switching devices. The switching characteristics of a GTO thyristor are influenced by doping profile, material properties, lifetime and mobility of holes and electrons. Recently, most of the research on GTO thyristor is strictly experimental and has focused on their physical performances. On the other hand, the internal behaviour of GTO thyristor is not well understood. The best accuracy switching waveforms and the internal behaviour of the device can only be addressed by device simulation. Physical models (Poisson equation, drift-diffusion and current-continuity equations) of GTO thyristor are valuable for studying the internal behaviour of the device is used in the simulation. These equations are numerically solved by using finite element method. This project presents: the modelling and switching simulation of GTO thyristor device by developing a device simulation software. The software is designed by using MATLAB Graphical User Interface (GUI) development environment. The device model has been developed based on the device structure and operation. The thesis focuses on the study of a comparison between silicon and silicon carbide GTO thyristor in terms of switching time performances and efficiency at the system level. 2010-05 Thesis http://umpir.ump.edu.my/id/eprint/2187/ http://umpir.ump.edu.my/id/eprint/2187/1/NORAINON_MOHAMED.PDF application/pdf en public masters Universiti Malaysia Pahang Faculty of Electrical & Electronic Engineering
institution	Universiti Malaysia Pahang Al-Sultan Abdullah
collection	UMPSA Institutional Repository
language	English
topic	TK Electrical engineering Electronics Nuclear engineering
spellingShingle	TK Electrical engineering Electronics Nuclear engineering Norainon, Mohamed Modelling and switching simulation of gate turn-off thyristor using finite element method
description	The gate turn-off (GTO) thyristor has the best voltage blocking and current conducting capabilities among all known high power semiconductor switching devices. The switching characteristics of a GTO thyristor are influenced by doping profile, material properties, lifetime and mobility of holes and electrons. Recently, most of the research on GTO thyristor is strictly experimental and has focused on their physical performances. On the other hand, the internal behaviour of GTO thyristor is not well understood. The best accuracy switching waveforms and the internal behaviour of the device can only be addressed by device simulation. Physical models (Poisson equation, drift-diffusion and current-continuity equations) of GTO thyristor are valuable for studying the internal behaviour of the device is used in the simulation. These equations are numerically solved by using finite element method. This project presents: the modelling and switching simulation of GTO thyristor device by developing a device simulation software. The software is designed by using MATLAB Graphical User Interface (GUI) development environment. The device model has been developed based on the device structure and operation. The thesis focuses on the study of a comparison between silicon and silicon carbide GTO thyristor in terms of switching time performances and efficiency at the system level.
format	Thesis
qualification_level	Master's degree
author	Norainon, Mohamed
author_facet	Norainon, Mohamed
author_sort	Norainon, Mohamed
title	Modelling and switching simulation of gate turn-off thyristor using finite element method
title_short	Modelling and switching simulation of gate turn-off thyristor using finite element method
title_full	Modelling and switching simulation of gate turn-off thyristor using finite element method
title_fullStr	Modelling and switching simulation of gate turn-off thyristor using finite element method
title_full_unstemmed	Modelling and switching simulation of gate turn-off thyristor using finite element method
title_sort	modelling and switching simulation of gate turn-off thyristor using finite element method
granting_institution	Universiti Malaysia Pahang
granting_department	Faculty of Electrical & Electronic Engineering
publishDate	2010
url	http://umpir.ump.edu.my/id/eprint/2187/1/NORAINON_MOHAMED.PDF
_version_	1783731890227773440

Modelling and switching simulation of gate turn-off thyristor using finite element method

Similar Items