Pattern layout optimization for low series resistance and capacitance in gan schottky barrier diodes

Rectenna, which stands for rectifying antenna, is used to capture and convert the microwave power to the direct current. Applications of the rectenna are mainly focused between remote areas, where the physical power connections are not feasible for transferring power [29]. In this rectenna system,...

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Main Author:	Ahmad Syahiman, Mohd Shah
Format:	Thesis
Language:	English
Published:	2012
Subjects:	TK Electrical engineering Electronics Nuclear engineering
Online Access:	http://umpir.ump.edu.my/id/eprint/3573/1/AHMAD_SYAHIMAN_BIN_MOHD_SHAH.PDF
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id	my-ump-ir.3573
record_format	uketd_dc
spelling	my-ump-ir.35732018-06-27T08:35:56Z Pattern layout optimization for low series resistance and capacitance in gan schottky barrier diodes 2012-02 Ahmad Syahiman, Mohd Shah TK Electrical engineering. Electronics Nuclear engineering Rectenna, which stands for rectifying antenna, is used to capture and convert the microwave power to the direct current. Applications of the rectenna are mainly focused between remote areas, where the physical power connections are not feasible for transferring power [29]. In this rectenna system, one of the important elements, is Schottky barrier diode. This diode plays as a rectifier. This diode has to possess the following characteristics, such as low series resistance,R5 , low zero-biased junction capacitance, Co, low turn-on voltage, VON, and high breakdown voltage, VBR in order to obtain a higher efficiency of power conversion [1]. However, the commercially-available Si and GaAs-based diodes have suffered from their low breakdown voltage which consequently,allows them to be applicable only for .low power transmission system. Thus, GaN is one of the candidates to replace these two materials due to its high breakdown voltage [4]. In this study, we introduced an Ultra-finger diode as this structure owned a longer Schottky perimeter. From this study,the trade-off relation between and series resistance and capacitance was revealed as the series resistance significantly decreased by expanding the perimeter of the Schottky contacts even at the similar Schottky area. This ultra-finger diode exhibited lower time constant, 'r value than the conventional circular diode.The value of time constant is minimized by maximizing the value of Schottky perimeter multiplied with the area.From this investigation, we propose the ultra-finger diode as an alternative solution for better optimization for low series resistance and capacitance. 2012-02 Thesis http://umpir.ump.edu.my/id/eprint/3573/ http://umpir.ump.edu.my/id/eprint/3573/1/AHMAD_SYAHIMAN_BIN_MOHD_SHAH.PDF application/pdf en public masters University of Fukui School of Engineering
institution	Universiti Malaysia Pahang Al-Sultan Abdullah
collection	UMPSA Institutional Repository
language	English
topic	TK Electrical engineering Electronics Nuclear engineering
spellingShingle	TK Electrical engineering Electronics Nuclear engineering Ahmad Syahiman, Mohd Shah Pattern layout optimization for low series resistance and capacitance in gan schottky barrier diodes
description	Rectenna, which stands for rectifying antenna, is used to capture and convert the microwave power to the direct current. Applications of the rectenna are mainly focused between remote areas, where the physical power connections are not feasible for transferring power [29]. In this rectenna system, one of the important elements, is Schottky barrier diode. This diode plays as a rectifier. This diode has to possess the following characteristics, such as low series resistance,R5 , low zero-biased junction capacitance, Co, low turn-on voltage, VON, and high breakdown voltage, VBR in order to obtain a higher efficiency of power conversion [1]. However, the commercially-available Si and GaAs-based diodes have suffered from their low breakdown voltage which consequently,allows them to be applicable only for .low power transmission system. Thus, GaN is one of the candidates to replace these two materials due to its high breakdown voltage [4]. In this study, we introduced an Ultra-finger diode as this structure owned a longer Schottky perimeter. From this study,the trade-off relation between and series resistance and capacitance was revealed as the series resistance significantly decreased by expanding the perimeter of the Schottky contacts even at the similar Schottky area. This ultra-finger diode exhibited lower time constant, 'r value than the conventional circular diode.The value of time constant is minimized by maximizing the value of Schottky perimeter multiplied with the area.From this investigation, we propose the ultra-finger diode as an alternative solution for better optimization for low series resistance and capacitance.
format	Thesis
qualification_level	Master's degree
author	Ahmad Syahiman, Mohd Shah
author_facet	Ahmad Syahiman, Mohd Shah
author_sort	Ahmad Syahiman, Mohd Shah
title	Pattern layout optimization for low series resistance and capacitance in gan schottky barrier diodes
title_short	Pattern layout optimization for low series resistance and capacitance in gan schottky barrier diodes
title_full	Pattern layout optimization for low series resistance and capacitance in gan schottky barrier diodes
title_fullStr	Pattern layout optimization for low series resistance and capacitance in gan schottky barrier diodes
title_full_unstemmed	Pattern layout optimization for low series resistance and capacitance in gan schottky barrier diodes
title_sort	pattern layout optimization for low series resistance and capacitance in gan schottky barrier diodes
granting_institution	University of Fukui
granting_department	School of Engineering
publishDate	2012
url	http://umpir.ump.edu.my/id/eprint/3573/1/AHMAD_SYAHIMAN_BIN_MOHD_SHAH.PDF
_version_	1783731901021814784

Pattern layout optimization for low series resistance and capacitance in gan schottky barrier diodes

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