Design and simulation of vertical strained SiGe impact ionization mosfet(vesimos)
Miniaturization of semiconductor devices beyond sub-l00nm has commenced several problems for further scaling. Low subthreshold voltage, reduced carrier mobility, and increased leakage currents were identified to be the paramount issues that leads to high power consumption and heating. The Impact Ion...
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| 格式: | Thesis |
| 語言: | English |
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2011
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| 主題: | |
| 在線閱讀: | https://eprints.ums.edu.my/id/eprint/11814/1/mt0000000641.pdf |
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