Simulation and characterization of charge carrier transport in organic semiconductor transistor
The main objective of this research is to investigate the charge transport in organic devices by simulating the 2-D design structure of the device using TCAD tools. As organic transistors are preparing to make improvements towards flexible and low cost electronics applications, an accurate models an...
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| Format: | Thesis |
| Language: | English English |
| Published: |
2017
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| Subjects: | |
| Online Access: | https://eprints.ums.edu.my/id/eprint/38893/1/24%20PAGES.pdf https://eprints.ums.edu.my/id/eprint/38893/2/FULLTEXT.pdf |
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| Summary: | The main objective of this research is to investigate the charge transport in organic devices by simulating the 2-D design structure of the device using TCAD tools. As organic transistors are preparing to make improvements towards flexible and low cost electronics applications, an accurate models and simulation methods were demanded to predict the optimized performance and circuit design. The extraction and analysation of the transistor parameters from the electrical characterization of the 2-D organic semiconductor device were done to learn the behavior of the device itself. The characterization can describe the behavior of the transistor in the linear and saturation region, which is determining the drain current for any applied voltages. One of the important parameter for organic transistor devices is field effect mobility, the extraction of gate voltage dependence and the contact effects. Acknowledging the contact effect is very significant since it contribution on the device performance. Varied temperature research on organic transistor also has been used to characterize charge transport. There few common established model for charge transport in organic semiconductors because the exposed on thermally activated charge transport which is activation energies. Thus, the analysis of the effect of contact resistance and thermal activation energy of organic transistor also been investigated. The contact resistance obtained then fitted into the linear region equation for modified mobility, μ1110d, which obtain higher mobility than those obtained from the common linear region mobility model, proves that contact resistance should be considered while estimating the mobility. The observed temperature dependence of mobility can be explained by empirical MNR while there is an inverse relationship between £0 and μMN• The μo reveals that lower temperature region has lower mobility than the higher temperature region. |
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