Surface morphology, optical and electrical properties of porous silicon produced by chemical etching

In past decades, silicon is commonly used in the semiconductor industry. Recently, researcher extensively studied the porous silicon produced by electrochemical etching because there is possibility to develop a new approach in developing optoelectronic devices, solar cell and sensor. In this researc...

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Main Author: Tham, Dwight Jern Ee
Format: Thesis
Language:English
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Online Access:http://umt-ir.umt.edu.my:8080/jspui/bitstream/123456789/3010/1/QC%206118%20.S5%20T4%202011%20Abstract.pdf
http://umt-ir.umt.edu.my:8080/jspui/bitstream/123456789/3010/2/QC%206118%20.S5%20T4%202011%20FullText.pdf
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spelling my-umt-ir.-30102014-05-18T06:43:31Z Surface morphology, optical and electrical properties of porous silicon produced by chemical etching Tham, Dwight Jern Ee In past decades, silicon is commonly used in the semiconductor industry. Recently, researcher extensively studied the porous silicon produced by electrochemical etching because there is possibility to develop a new approach in developing optoelectronic devices, solar cell and sensor. In this research, the Porous Silicon (PS) was fabricated by chemical etching method on the P-type silicon wafer in the mixture of hydrofluoric acid (HF) etchant with different concentration of nitric acid(HN03) of 20%, 40%, 65% and at different etching time of 5, 10, 15, 20, 25 minutes. Terengganu: Universiti Malaysia Terengganu 2011-09 Thesis en http://dspace.psnz.umt.edu.my/xmlui/handle/123456789/3010 http://umt-ir.umt.edu.my:8080/jspui/bitstream/123456789/3010/1/QC%206118%20.S5%20T4%202011%20Abstract.pdf 47491ac1e0746683ebaf5409fec04ae1 http://umt-ir.umt.edu.my:8080/jspui/bitstream/123456789/3010/2/QC%206118%20.S5%20T4%202011%20FullText.pdf c8b93a829536f3da3b80e800fb1d9975 http://umt-ir.umt.edu.my:8080/jspui/bitstream/123456789/3010/3/license.txt 8a4605be74aa9ea9d79846c1fba20a33 QC 6118 .S5 T4 2011 Tham, Dwight Jern Ee Tesis FST 2011 Porous silicon
institution Universiti Malaysia Terengganu
collection UMT Repository System
language English
topic QC 6118 .S5 T4 2011
QC 6118 .S5 T4 2011
Tesis FST 2011
Porous silicon
spellingShingle QC 6118 .S5 T4 2011
QC 6118 .S5 T4 2011
Tesis FST 2011
Porous silicon
Tham, Dwight Jern Ee
Surface morphology, optical and electrical properties of porous silicon produced by chemical etching
description In past decades, silicon is commonly used in the semiconductor industry. Recently, researcher extensively studied the porous silicon produced by electrochemical etching because there is possibility to develop a new approach in developing optoelectronic devices, solar cell and sensor. In this research, the Porous Silicon (PS) was fabricated by chemical etching method on the P-type silicon wafer in the mixture of hydrofluoric acid (HF) etchant with different concentration of nitric acid(HN03) of 20%, 40%, 65% and at different etching time of 5, 10, 15, 20, 25 minutes.
format Thesis
author Tham, Dwight Jern Ee
author_facet Tham, Dwight Jern Ee
author_sort Tham, Dwight Jern Ee
title Surface morphology, optical and electrical properties of porous silicon produced by chemical etching
title_short Surface morphology, optical and electrical properties of porous silicon produced by chemical etching
title_full Surface morphology, optical and electrical properties of porous silicon produced by chemical etching
title_fullStr Surface morphology, optical and electrical properties of porous silicon produced by chemical etching
title_full_unstemmed Surface morphology, optical and electrical properties of porous silicon produced by chemical etching
title_sort surface morphology, optical and electrical properties of porous silicon produced by chemical etching
granting_institution Terengganu: Universiti Malaysia Terengganu
url http://umt-ir.umt.edu.my:8080/jspui/bitstream/123456789/3010/1/QC%206118%20.S5%20T4%202011%20Abstract.pdf
http://umt-ir.umt.edu.my:8080/jspui/bitstream/123456789/3010/2/QC%206118%20.S5%20T4%202011%20FullText.pdf
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