The effect of Phosphorous implant in converting the Enhancement Mode Transistor into Depletion Mode Transistor

Metal-Oxide-Semiconductor field effect transistor (MOSFET) forms the basis in most of electronic applications. In certain part of electronic circuitry, there is a requirement to use depletion mode of MOSFET which delivers current at Vg=0V. This type of transistor is normally on unless reverse-pola...

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主要作者: Hazian, Mamat
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