The effect of Phosphorous implant in converting the Enhancement Mode Transistor into Depletion Mode Transistor
Metal-Oxide-Semiconductor field effect transistor (MOSFET) forms the basis in most of electronic applications. In certain part of electronic circuitry, there is a requirement to use depletion mode of MOSFET which delivers current at Vg=0V. This type of transistor is normally on unless reverse-pola...
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主要作者: | Hazian, Mamat |
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格式: | Thesis |
語言: | English |
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在線閱讀: | http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/1450/2/Page%201-24.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/1450/3/Full%20text.pdf |
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