The effect of Phosphorous implant in converting the Enhancement Mode Transistor into Depletion Mode Transistor

The effect of Phosphorous implant in converting the Enhancement Mode Transistor into Depletion Mode Transistor

Metal-Oxide-Semiconductor field effect transistor (MOSFET) forms the basis in most of electronic applications. In certain part of electronic circuitry, there is a requirement to use depletion mode of MOSFET which delivers current at Vg=0V. This type of transistor is normally on unless reverse-pola...

Saved in:

书目详细资料
主要作者:	Hazian, Mamat
格式:	Thesis
语言:	English
主题:	Transistors Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Metal oxide semiconductors Field effect transistors (FETs) Silicon ATLAS (Computer program language)
在线阅读:	http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/1450/2/Page%201-24.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/1450/3/Full%20text.pdf
标签:	添加标签没有标签, 成为第一个标记此记录!

相似书籍

Optimization and characterization of 130 Nm CMOS transistor design using TCAD simulation /
由: Hani Noorashiqin Abd Majid
出版: (2007)

Fabrication and characterization of microfluidic field effect transistor on silicon substrate
由: Maizatul, Zolkapli

Electrical characterization of bulk traps and interface traps in the fully-depleted SOI MOSFET /
由: Lun, Zhao
出版: (2002)

A study of hot carrier degradation in LDMOS transistor /
由: Atikah Razi
出版: (2013)

Impact of fabrication process on hot carrier injection in VDMOS transistor /
由: Murti, Wijaya Bayu
出版: (2013)

Design and construction of charge pumping technique for MOS transistor characterization /
由: Lee, Hock Guan
出版: (2004)

Characterization of hot-carrier degradation in submicrometer MOS transistors /
由: Ang, Diing Shenp
出版: (1997)

Junctionless transistors: parametric study with conventional doping in MOSFETS

Hot-carrier characterization of submicrometer MOS transistors : subthreshold degradation and channel-width effect /
由: Qin, Wei Han
出版: (1998)

A study on the impact of processing parameters on low-voltage power MOSFET /
由: Nur Aqilah Othman
出版: (2012)

New techniques for the characterization of hot-carrier degradation in MOS devices /
由: Leang, Sern Ee
出版: (1997)

Extraction of submicron mosfet parameters /
由: Seah, Kah Suan
出版: (1997)

Development of empirical potential profile model for unusual energy separation of subbands in inidium-absorbed Si(111) inversion layer /
由: Nur Idayu binti Ayob
出版: (2015)

A study of long and short channel NMOSFET on threshold voltage /
由: Norseha Ariffin
出版: (2013)

Simulation of charge-trapping in nano-scale mosfets in the presence of random-dopants-induced variability /
由: Muhammad Faiz Bukhori
出版: (2011)

The effect of doping concentration on the characteristics of n-channel MOSFET /
由: Teen, Soh Hong
出版: (2005)

Carrier lifetime characterization techniques in SOI and bulk silicon /
由: Cheng, Zhiyuan
出版: (1999)

A study on the effects of design parameters on PD SOI MOSFET /
由: Nurul Azimah Ahmad Arzaai
出版: (2013)

A study on hot carrier effect (HCE) on LDD n-MOSFET /
由: Haziezol Helmi Mohd Yusof
出版: (2013)

Characterization of pmosfet degradation in negative bias temperature instability test /
由: Soon, Foo Yew
出版: (2012)

Fault tolerance of L1 data cache memory induced by intrinsic parameters fluctuation in sub 10nm UTB-SOI MOSFETs
由: Ahmed, Rabah Abood
出版: (2013)

Evaluation of hot-carrier degradation in submicrometre MOSFETs by gate capacitance and charge pumping current measurements /
由: Tan, Suat Eng
出版: (1997)

Hot-carrier degradation study in MOSFET's by charge pumping, gated-diode and floating gate techniques /
由: Goh, Yong Han
出版: (1997)

The lateral profiling of interface state and oxide charge densities in electrically stressed MOSFET's /
由: Hoon, Siew Kuok
出版: (1998)

A study of hot-carrier degradation in nitrided and conventional oxides /
由: Goo, Kah Heong
出版: (1998)

Hot-carrier effects in thin gate oxide MOSFET's /
由: See, Leng Kian
出版: (1998)

Hot-carrier studies in submicrometer SOI and conventional MOSFETs /
由: Yip, Anselm
出版: (1998)

Latent damage generation in silicon dioxide under high-field impulse and constant-bias stressing /
由: Lim, Peng Soon
出版: (2001)

A study on the impact of processing parameters on silicon-on-insulator power MOSFET /
由: Noraziah Abd Wahab
出版: (2013)

Numerical and experimental studies of backgating in high electron mobility transistors /
由: Lee, Kin Man
出版: (1995)

Performance of advanced-process and multi-gated mosfets based on geometric and process design considerations /
由: Fazliyatul Azwa Md Rezali
出版: (2017)

Degradation analysis based on design considerations of advanced-process MOSFET /
由: Ainul Fatin Muhammad Alimin
出版: (2018)

Lateral Diffused Metal Oxide Semiconductor (LDMOS) transistor Safe Operating Area (HCI-SOA) characterization under hot carrier injection /
由: Sharifah Shafini Syed Shahabuddin
出版: (2013)

Numerical simulations of innovative ground plane and double-gate configurations in thin-body and -buried oxide of SOI MOSFETS

Integration of nanoporous structure into vertical organic field effect transistor /
由: Muhammad Zharfan Mohd Halizan
出版: (2018)

A study of hot-carrier effects using photon emission spectroscopy /
由: Tao, Jing Mei
出版: (1997)

Vanadyl tetrabutyltetrakis (dimethylamino) phthalocyanine based thin films for organic sensor and transistor applications /
由: Nur Adilah Roslan
出版: (2020)

CMOS compatible vertical surround gate mosfets with reduced parasitics /
由: Kunz, Veit Dominik
出版: (2003)

Performance of 7NM strained finfet of different channel material based on geometrical properties /
由: Fatin Nur Nadzirah Azhari
出版: (2016)

Simulation framework of NBTI degradation in nano-scale p-mosfets from the perspective of hydrogen and non-hydrogen transport formalism /
由: Hanim Hussin
出版: (2015)

Services hosted by the Perpustakaan Sultan Abdul Samad, Universiti Putra Malaysia with Cooperation MySyL Group