Synthesis and characterization of ZnO nanostructures for ultraviolet (UV) light sensing application

Nanotechnology has strong influence over many known technologies with plenty of advantages, such as low-cost and larger surface-area-to-volume ratio compared with their bulk counterpart. Among II-IV semiconductor materials zinc oxide (ZnO) is an ntype semiconductor with band gap energy of 3.37 eV...

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Main Author:	Qazi Muhammad, Humayun
Format:	Thesis
Language:	English
Subjects:	Ultraviolet (UV) Nanotechnology ZnO nanostructures Light applications Nanomaterials
Online Access:	http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/44367/1/P.1-24.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/44367/2/Full%20Text.pdf
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spelling	my-unimap-443672016-12-08T02:10:18Z Synthesis and characterization of ZnO nanostructures for ultraviolet (UV) light sensing application Qazi Muhammad, Humayun Prof. Dr. Uda Hashim Nanotechnology has strong influence over many known technologies with plenty of advantages, such as low-cost and larger surface-area-to-volume ratio compared with their bulk counterpart. Among II-IV semiconductor materials zinc oxide (ZnO) is an ntype semiconductor with band gap energy of 3.37 eV and having large exciton binding energy of ~ 60 meV. ZnO and its alloys have vast device applications mainly in manufacturing of light emitting diodes (LEDs), solar cells, optical waveguides and Ultraviolet (UV) photodetectors. Ultraviolet (UV) photodetectors are widely used in various commercial and military applications, especially to secure space-to-space communications, pollution monitoring, water sterilization, flame sensing, and early missile plume detection. In contrast to gallium nitride (GaN), ZnO has a highest electron saturation velocity thus, photodetectors equipped with ZnO can perform at a maximum operation speed. The objective of research is to deposit ZnO thin film and ZnO nanorods by sol-gel method at selective area of microgap electrodes spacing and characterization for ultraviolet (UV) sensing application. Therefore the Zerogap structure of butterfly topology was designed by AutoCAD software, and to achieve the better resolution during photo masking process the design was transferred to commercial chrome glass photomask. All the area selective deposited ZnO based nanosensors were further tested for ultraviolet (UV) sensing application. On exposure of ultraviolet (UV) light the current gains, response/recovery times, repeatability, sensitivity, reproductivity and responsivity of the fabricated ZnO based microgap electrodes sensors displayed the promising application for UV light detection. Moreover the signal detection at low operating voltage (1 V) revealed that fabricated sensors can be used for miniaturized devices with low power consumption. The surface morphologies structural, optical and electrical properties of the synthesized nanostructures ZnO were characterized using SEM, XRD, and sourcemeter respectively. To study the doping effect on ZnO nanostructures finally, tin (Sn) was selected, and successfully synthesized on glass substrate by low temperature sol-gel hydrothermal growth process. The as synthesized Sn-doped ZnO nanorods were post annealed at three different temperatures and investigated the effect of post-annealing temperatures on structural, optical, electrical and photoresponse properties by using Xray diffraction, UV-Vis spectroscopy, I-V and i-t measurements. The crystallinity and c-axis orientation of Sn-doped ZnO nanorods were increased with annealing temperatures. As post-annealing temperature increased the Sn-doped ZnO nanorods showed noticeable variations having agglomerated and spherical shape at surface morphology than those at a lower post-annealing temperature; this result indicates that the samples are highly crystalline in nature. The optical bandgap energy of Sn-doped ZnO nanorods decreased as annealing temperature increases. Electrical characteristics reveal the effect of annealing temperature on resistivity and photoresponse properties of Sn-doped ZnO nanorods. Hence, the proposed Herve and Vandamme model and the improved ultraviolet (UV) photoresponse of post-annealed samples are applicable in optoelectronic device applications. Universiti Malaysia Perlis (UniMAP) 2014 Thesis en http://dspace.unimap.edu.my:80/xmlui/handle/123456789/44367 http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/44367/1/P.1-24.pdf fdf484e2031cb4983f429ac4abb09b3f http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/44367/2/Full%20Text.pdf 3047a7063a7f56f0ed10a78596599942 http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/44367/3/license.txt 8a4605be74aa9ea9d79846c1fba20a33 Ultraviolet (UV) Nanotechnology ZnO nanostructures Light applications Nanomaterials Institute of Nanoelectronic Engineering
institution	Universiti Malaysia Perlis
collection	UniMAP Institutional Repository
language	English
advisor	Prof. Dr. Uda Hashim
topic	Ultraviolet (UV) Nanotechnology ZnO nanostructures Light applications Nanomaterials
spellingShingle	Ultraviolet (UV) Nanotechnology ZnO nanostructures Light applications Nanomaterials Qazi Muhammad, Humayun Synthesis and characterization of ZnO nanostructures for ultraviolet (UV) light sensing application
description	Nanotechnology has strong influence over many known technologies with plenty of advantages, such as low-cost and larger surface-area-to-volume ratio compared with their bulk counterpart. Among II-IV semiconductor materials zinc oxide (ZnO) is an ntype semiconductor with band gap energy of 3.37 eV and having large exciton binding energy of ~ 60 meV. ZnO and its alloys have vast device applications mainly in manufacturing of light emitting diodes (LEDs), solar cells, optical waveguides and Ultraviolet (UV) photodetectors. Ultraviolet (UV) photodetectors are widely used in various commercial and military applications, especially to secure space-to-space communications, pollution monitoring, water sterilization, flame sensing, and early missile plume detection. In contrast to gallium nitride (GaN), ZnO has a highest electron saturation velocity thus, photodetectors equipped with ZnO can perform at a maximum operation speed. The objective of research is to deposit ZnO thin film and ZnO nanorods by sol-gel method at selective area of microgap electrodes spacing and characterization for ultraviolet (UV) sensing application. Therefore the Zerogap structure of butterfly topology was designed by AutoCAD software, and to achieve the better resolution during photo masking process the design was transferred to commercial chrome glass photomask. All the area selective deposited ZnO based nanosensors were further tested for ultraviolet (UV) sensing application. On exposure of ultraviolet (UV) light the current gains, response/recovery times, repeatability, sensitivity, reproductivity and responsivity of the fabricated ZnO based microgap electrodes sensors displayed the promising application for UV light detection. Moreover the signal detection at low operating voltage (1 V) revealed that fabricated sensors can be used for miniaturized devices with low power consumption. The surface morphologies structural, optical and electrical properties of the synthesized nanostructures ZnO were characterized using SEM, XRD, and sourcemeter respectively. To study the doping effect on ZnO nanostructures finally, tin (Sn) was selected, and successfully synthesized on glass substrate by low temperature sol-gel hydrothermal growth process. The as synthesized Sn-doped ZnO nanorods were post annealed at three different temperatures and investigated the effect of post-annealing temperatures on structural, optical, electrical and photoresponse properties by using Xray diffraction, UV-Vis spectroscopy, I-V and i-t measurements. The crystallinity and c-axis orientation of Sn-doped ZnO nanorods were increased with annealing temperatures. As post-annealing temperature increased the Sn-doped ZnO nanorods showed noticeable variations having agglomerated and spherical shape at surface morphology than those at a lower post-annealing temperature; this result indicates that the samples are highly crystalline in nature. The optical bandgap energy of Sn-doped ZnO nanorods decreased as annealing temperature increases. Electrical characteristics reveal the effect of annealing temperature on resistivity and photoresponse properties of Sn-doped ZnO nanorods. Hence, the proposed Herve and Vandamme model and the improved ultraviolet (UV) photoresponse of post-annealed samples are applicable in optoelectronic device applications.
format	Thesis
author	Qazi Muhammad, Humayun
author_facet	Qazi Muhammad, Humayun
author_sort	Qazi Muhammad, Humayun
title	Synthesis and characterization of ZnO nanostructures for ultraviolet (UV) light sensing application
title_short	Synthesis and characterization of ZnO nanostructures for ultraviolet (UV) light sensing application
title_full	Synthesis and characterization of ZnO nanostructures for ultraviolet (UV) light sensing application
title_fullStr	Synthesis and characterization of ZnO nanostructures for ultraviolet (UV) light sensing application
title_full_unstemmed	Synthesis and characterization of ZnO nanostructures for ultraviolet (UV) light sensing application
title_sort	synthesis and characterization of zno nanostructures for ultraviolet (uv) light sensing application
granting_institution	Universiti Malaysia Perlis (UniMAP)
granting_department	Institute of Nanoelectronic Engineering
url	http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/44367/1/P.1-24.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/44367/2/Full%20Text.pdf
_version_	1747836833186709504

Synthesis and characterization of ZnO nanostructures for ultraviolet (UV) light sensing application

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