Fabrication and characterization of ultra thin Si0₂ for nano devices: surface morphology and electrical study

The aim of this research is to fabricate and characterize (optical and electrical) an ultra thin silicon dioxide for sub nano devices. In this research, dry oxidation method using high temperature furnace is chosen to fabricate a thin layer of oxide below 30Angstroms. There are three level of tempe...

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Main Author:	Mohd Faiz Aizad, Abdul Fatah
Format:	Thesis
Language:	English
Subjects:	Silicon nitride Electric insulators and insulation > Thin films Thin films Sub nano devices Ultra thin silicon dioxide
Online Access:	http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/63455/1/Page%201-24.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/63455/2/Full%20text.pdf
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spelling	my-unimap-634552019-11-29T07:12:27Z Fabrication and characterization of ultra thin Si0₂ for nano devices: surface morphology and electrical study Mohd Faiz Aizad, Abdul Fatah Uda Hashim, Assoc. Prof. Dr. The aim of this research is to fabricate and characterize (optical and electrical) an ultra thin silicon dioxide for sub nano devices. In this research, dry oxidation method using high temperature furnace is chosen to fabricate a thin layer of oxide below 30Angstroms. There are three level of temperature used. that is 7S0, 800 and 8S(/C. The wqfers were grown in 0.333 litre/min. 0,667 liter/min and 1.00 literlmin oxygen flow rate with variation in growth time 1, 2 and 3 minutes. Thicknesses were obtained using ellipsometer and the surface topography and were achieved using atomic force microscope (UM). Parameters and data has been interpreted using Taguchi's method. This is to analyze the most affecting factors in producing an ultra thin silicon dioxide. Taguchi's method were able to predict the thicknesses for each combination of parameters. Results show that the temperature is the most effecting factor that effects the growth of oxide. Results also show that oxygen flow rates do have an influence to the thicknesses and surface properties. A higher amount of flow rate (illmin) will increase the oxide thickness and also will create a smooth oxide surface. There are also results of a high frequency CV and IV techniques were employed as for the devices electrical characterizations. The CV results shows that there is a shift in VFB for all the wafers and IV shows that breakdown occurs at 1 MV/cm. Universiti Malaysia Perlis (UniMAP) 2007 Thesis en http://dspace.unimap.edu.my:80/xmlui/handle/123456789/63455 http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/63455/1/Page%201-24.pdf 1a049ca346f61b7e7189117885b7964d http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/63455/2/Full%20text.pdf 6f0c65cadb0bb18ac428da1a89c6b2b8 http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/63455/3/license.txt 8a4605be74aa9ea9d79846c1fba20a33 Silicon nitride Electric insulators and insulation -- Thin films Thin films Sub nano devices Ultra thin silicon dioxide School of Microelectronic Engineering
institution	Universiti Malaysia Perlis
collection	UniMAP Institutional Repository
language	English
advisor	Uda Hashim, Assoc. Prof. Dr.
topic	Silicon nitride Electric insulators and insulation -- Thin films Thin films Sub nano devices Ultra thin silicon dioxide
spellingShingle	Silicon nitride Electric insulators and insulation -- Thin films Thin films Sub nano devices Ultra thin silicon dioxide Mohd Faiz Aizad, Abdul Fatah Fabrication and characterization of ultra thin Si0₂ for nano devices: surface morphology and electrical study
description	The aim of this research is to fabricate and characterize (optical and electrical) an ultra thin silicon dioxide for sub nano devices. In this research, dry oxidation method using high temperature furnace is chosen to fabricate a thin layer of oxide below 30Angstroms. There are three level of temperature used. that is 7S0, 800 and 8S(/C. The wqfers were grown in 0.333 litre/min. 0,667 liter/min and 1.00 literlmin oxygen flow rate with variation in growth time 1, 2 and 3 minutes. Thicknesses were obtained using ellipsometer and the surface topography and were achieved using atomic force microscope (UM). Parameters and data has been interpreted using Taguchi's method. This is to analyze the most affecting factors in producing an ultra thin silicon dioxide. Taguchi's method were able to predict the thicknesses for each combination of parameters. Results show that the temperature is the most effecting factor that effects the growth of oxide. Results also show that oxygen flow rates do have an influence to the thicknesses and surface properties. A higher amount of flow rate (illmin) will increase the oxide thickness and also will create a smooth oxide surface. There are also results of a high frequency CV and IV techniques were employed as for the devices electrical characterizations. The CV results shows that there is a shift in VFB for all the wafers and IV shows that breakdown occurs at 1 MV/cm.
format	Thesis
author	Mohd Faiz Aizad, Abdul Fatah
author_facet	Mohd Faiz Aizad, Abdul Fatah
author_sort	Mohd Faiz Aizad, Abdul Fatah
title	Fabrication and characterization of ultra thin Si0₂ for nano devices: surface morphology and electrical study
title_short	Fabrication and characterization of ultra thin Si0₂ for nano devices: surface morphology and electrical study
title_full	Fabrication and characterization of ultra thin Si0₂ for nano devices: surface morphology and electrical study
title_fullStr	Fabrication and characterization of ultra thin Si0₂ for nano devices: surface morphology and electrical study
title_full_unstemmed	Fabrication and characterization of ultra thin Si0₂ for nano devices: surface morphology and electrical study
title_sort	fabrication and characterization of ultra thin si0₂ for nano devices: surface morphology and electrical study
granting_institution	Universiti Malaysia Perlis (UniMAP)
granting_department	School of Microelectronic Engineering
url	http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/63455/1/Page%201-24.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/63455/2/Full%20text.pdf
_version_	1747836856723046400

Fabrication and characterization of ultra thin Si0₂ for nano devices: surface morphology and electrical study

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