Fabrication and characterization of ultra thin Si0₂ for nano devices: surface morphology and electrical study
The aim of this research is to fabricate and characterize (optical and electrical) an ultra thin silicon dioxide for sub nano devices. In this research, dry oxidation method using high temperature furnace is chosen to fabricate a thin layer of oxide below 30Angstroms. There are three level of tempe...
Saved in:
主要作者: | Mohd Faiz Aizad, Abdul Fatah |
---|---|
格式: | Thesis |
語言: | English |
主題: | |
在線閱讀: | http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/63455/1/Page%201-24.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/63455/2/Full%20text.pdf |
標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|
相似書籍
-
Trap-assisted tunneling mechanism of Zirconium Oxynitride (ZrON) thin film on Silicon Carbide /
由: Nicklaane Krishnamoorthy
出版: (2020) -
Structure and optical properties of multi-phase structured amorphous silicon carbon nitride thin films deposited by plasma enhanced chemical vapour deposition /
由: Mohd Azam Abdul Rahman
出版: (2018) -
The structure and optical characteristics of plasma enhanced chemical vapour deposited silicon oxide thin films /
由: Tan, Kim Hee
出版: (1997) -
Characterisation of defects in tantalum pentoxide films by thermally stimulated current /
由: Josephine, L. Premila
出版: (1995) -
Preparation and characterisation of hydrogenated R.F. sputtered amorphous silicon carbide films /
由: Loo, Fook Leong
出版: (1996)