Characterization of alignment mark to obtain reliable alignment performance in advanced lithography

The continued downscaling of semiconductor fabrication has imposed increasingly tighter overlay tolerances. Such tight tolerances will require very high performance in alignment. Hence, the objective of this research to establish characterization process for alignment evaluation and to determine th...

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Main Author:	Normah, Ahmad
Format:	Thesis
Language:	English
Subjects:	Semiconductor Microlitoghraphy Alignment ASML Scanner Alignment System Alignment process
Online Access:	http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/63456/1/Page%201-24.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/63456/2/Full%20text.pdf
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spelling	my-unimap-634562019-11-29T07:24:28Z Characterization of alignment mark to obtain reliable alignment performance in advanced lithography Normah, Ahmad Uda Hashim, Prof. Madya Dr. The continued downscaling of semiconductor fabrication has imposed increasingly tighter overlay tolerances. Such tight tolerances will require very high performance in alignment. Hence, the objective of this research to establish characterization process for alignment evaluation and to determine the robust alignment strategy for via 1 and metal 1 masking layers. This research covers four aspects, namely to find robust alignment mark for Metal 1 and Vial layer, alignment performance comparison between via mark and metal mark, alignment mark feature size effect on alignment signal, and to evaluate the new metal alignment mark performance. In order to achieve these objectives, a fractional factorial experiment with 4 parameters variation (tungsten thickness, over polish time, aluminum thickness, and final oxide thickness) and one duplicate was developed. Fifteen alignment Mark types were evaluated. Based from the characterization experiment, B2 mark with highest capability score (4979) and weighted Cpk score (75.16) is the 11I0St robust alignment mark for Metal 1 layer. A3 is the most robust alignment mark for Via 1 layer. A3 mark gives the highest total score in weighted average capability analysis (2173.52) and Cpk analysis (2800). Based on this work, contact mark is more sensitive to process variation as it pattern formation involved 6 processing steps compared to 3 steps for metal mark. For via //lark, big mark size (more than 2.6 f.1m) gives bad alignment signal quality compared to the smaller feature size. Regardless of mark size, alignment signal generates by metal mark gives comparable results. Two types of new metal alignment mark designs (B8 and B9) were evaluated in this experiment. The results were compared with standard metal mark (B6) and standard via mark (B4). B8 gives the best overall alignment and overlay performance since it gives the highest total in weighted average analysis (/40.96(alignment) and 53.43 (overlay)). The research findings becomes a baseline for C18 technology alignment process and already implemented in our production line. Universiti Malaysia Perlis (UniMAP) 2007 Thesis en http://dspace.unimap.edu.my:80/xmlui/handle/123456789/63456 http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/63456/1/Page%201-24.pdf 9511ebb759d70c5e03d012ea4c34d4ad http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/63456/2/Full%20text.pdf 238636e5863176f58c4ffdd7f6b0c1c0 http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/63456/3/license.txt 8a4605be74aa9ea9d79846c1fba20a33 Semiconductor Microlitoghraphy Alignment ASML Scanner Alignment System Alignment process School of Microelectronic Engineering
institution	Universiti Malaysia Perlis
collection	UniMAP Institutional Repository
language	English
advisor	Uda Hashim, Prof. Madya Dr.
topic	Semiconductor Microlitoghraphy Alignment ASML Scanner Alignment System Alignment process
spellingShingle	Semiconductor Microlitoghraphy Alignment ASML Scanner Alignment System Alignment process Normah, Ahmad Characterization of alignment mark to obtain reliable alignment performance in advanced lithography
description	The continued downscaling of semiconductor fabrication has imposed increasingly tighter overlay tolerances. Such tight tolerances will require very high performance in alignment. Hence, the objective of this research to establish characterization process for alignment evaluation and to determine the robust alignment strategy for via 1 and metal 1 masking layers. This research covers four aspects, namely to find robust alignment mark for Metal 1 and Vial layer, alignment performance comparison between via mark and metal mark, alignment mark feature size effect on alignment signal, and to evaluate the new metal alignment mark performance. In order to achieve these objectives, a fractional factorial experiment with 4 parameters variation (tungsten thickness, over polish time, aluminum thickness, and final oxide thickness) and one duplicate was developed. Fifteen alignment Mark types were evaluated. Based from the characterization experiment, B2 mark with highest capability score (4979) and weighted Cpk score (75.16) is the 11I0St robust alignment mark for Metal 1 layer. A3 is the most robust alignment mark for Via 1 layer. A3 mark gives the highest total score in weighted average capability analysis (2173.52) and Cpk analysis (2800). Based on this work, contact mark is more sensitive to process variation as it pattern formation involved 6 processing steps compared to 3 steps for metal mark. For via //lark, big mark size (more than 2.6 f.1m) gives bad alignment signal quality compared to the smaller feature size. Regardless of mark size, alignment signal generates by metal mark gives comparable results. Two types of new metal alignment mark designs (B8 and B9) were evaluated in this experiment. The results were compared with standard metal mark (B6) and standard via mark (B4). B8 gives the best overall alignment and overlay performance since it gives the highest total in weighted average analysis (/40.96(alignment) and 53.43 (overlay)). The research findings becomes a baseline for C18 technology alignment process and already implemented in our production line.
format	Thesis
author	Normah, Ahmad
author_facet	Normah, Ahmad
author_sort	Normah, Ahmad
title	Characterization of alignment mark to obtain reliable alignment performance in advanced lithography
title_short	Characterization of alignment mark to obtain reliable alignment performance in advanced lithography
title_full	Characterization of alignment mark to obtain reliable alignment performance in advanced lithography
title_fullStr	Characterization of alignment mark to obtain reliable alignment performance in advanced lithography
title_full_unstemmed	Characterization of alignment mark to obtain reliable alignment performance in advanced lithography
title_sort	characterization of alignment mark to obtain reliable alignment performance in advanced lithography
granting_institution	Universiti Malaysia Perlis (UniMAP)
granting_department	School of Microelectronic Engineering
url	http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/63456/1/Page%201-24.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/63456/2/Full%20text.pdf
_version_	1747836860190687232

Characterization of alignment mark to obtain reliable alignment performance in advanced lithography

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