Performance improvement of optoelectronic devices using Group III Nitride based quantum dot

Quantum dot has become a subject of incredible interest in the field of semiconductor optoelectronic device design for the researchers due to some of their unique properties. Among the wide range of optoelectronic devices some important characteristics of solar cell and laser have been studied ex...

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Format:	Thesis
Language:	English
Subjects:	Optoelectronic device Quantum dot Optoelectronic devices
Online Access:	http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/72234/1/Page%201-24.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/72234/2/Full%20text.pdf
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id	my-unimap-72234
record_format	uketd_dc
spelling	my-unimap-722342021-09-29T01:42:14Z Performance improvement of optoelectronic devices using Group III Nitride based quantum dot Mohd Abdur, Rashid, Assoc. Prof. Dr. Mohd Fareq, Abd Malek, Dr. Quantum dot has become a subject of incredible interest in the field of semiconductor optoelectronic device design for the researchers due to some of their unique properties. Among the wide range of optoelectronic devices some important characteristics of solar cell and laser have been studied extensively. These two devices are chosen because of the importance of these optoelectronic semiconductor devices in the field of renewable energy and optical fiber communication respectively. Recently it has been acknowledged that the researchers are paying more and more attention to the group-III nitride based quantum dots. Therefore this research is devoted to investigate the performance improvement of solar cell and laser using InN based quantum dot in the active layer of the device structure. In this research work the performance improvement of both these devices have been achieved by changing the active layer material without affecting other structural parameters. The effect of lattice constant on band gap energy optimization of has been investigated initially. From the numerical analysis it has been found that offers a band gap energy ranging from 0.7eV - 3.5eV, which makes it a suitable material for solar cell to absorb a wide range of light energy. Furthermore, it has been demonstrated that In0.87Ga0.13N is capable of emitting light at the wavelength of 1.55μm, which offers the lowest attenuation for signal transmission through optical fiber. Therefore the result of initial investigation ascertains that can be a promising material for the fabrication of solar cell as well as laser. Universiti Malaysia Perlis (UniMAP) Thesis en http://dspace.unimap.edu.my:80/xmlui/handle/123456789/72234 http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/72234/3/license.txt 8a4605be74aa9ea9d79846c1fba20a33 http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/72234/1/Page%201-24.pdf 07f9479542e242bae3dc6864f028ef33 http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/72234/2/Full%20text.pdf e9342d89fd803e7c7d975944b4f5cf5f Universiti Malaysia Perlis (UniMAP) Optoelectronic device Quantum dot Optoelectronic devices School of Electrical Systems Engineering
institution	Universiti Malaysia Perlis
collection	UniMAP Institutional Repository
language	English
advisor	Mohd Abdur, Rashid, Assoc. Prof. Dr. Mohd Fareq, Abd Malek, Dr.
topic	Optoelectronic device Quantum dot Optoelectronic devices
spellingShingle	Optoelectronic device Quantum dot Optoelectronic devices Performance improvement of optoelectronic devices using Group III Nitride based quantum dot
description	Quantum dot has become a subject of incredible interest in the field of semiconductor optoelectronic device design for the researchers due to some of their unique properties. Among the wide range of optoelectronic devices some important characteristics of solar cell and laser have been studied extensively. These two devices are chosen because of the importance of these optoelectronic semiconductor devices in the field of renewable energy and optical fiber communication respectively. Recently it has been acknowledged that the researchers are paying more and more attention to the group-III nitride based quantum dots. Therefore this research is devoted to investigate the performance improvement of solar cell and laser using InN based quantum dot in the active layer of the device structure. In this research work the performance improvement of both these devices have been achieved by changing the active layer material without affecting other structural parameters. The effect of lattice constant on band gap energy optimization of has been investigated initially. From the numerical analysis it has been found that offers a band gap energy ranging from 0.7eV - 3.5eV, which makes it a suitable material for solar cell to absorb a wide range of light energy. Furthermore, it has been demonstrated that In0.87Ga0.13N is capable of emitting light at the wavelength of 1.55μm, which offers the lowest attenuation for signal transmission through optical fiber. Therefore the result of initial investigation ascertains that can be a promising material for the fabrication of solar cell as well as laser.
format	Thesis
title	Performance improvement of optoelectronic devices using Group III Nitride based quantum dot
title_short	Performance improvement of optoelectronic devices using Group III Nitride based quantum dot
title_full	Performance improvement of optoelectronic devices using Group III Nitride based quantum dot
title_fullStr	Performance improvement of optoelectronic devices using Group III Nitride based quantum dot
title_full_unstemmed	Performance improvement of optoelectronic devices using Group III Nitride based quantum dot
title_sort	performance improvement of optoelectronic devices using group iii nitride based quantum dot
granting_institution	Universiti Malaysia Perlis (UniMAP)
granting_department	School of Electrical Systems Engineering
url	http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/72234/1/Page%201-24.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/72234/2/Full%20text.pdf
_version_	1747836860682469376

Performance improvement of optoelectronic devices using Group III Nitride based quantum dot

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