Performance improvement of optoelectronic devices using Group III Nitride based quantum dot

Quantum dot has become a subject of incredible interest in the field of semiconductor optoelectronic device design for the researchers due to some of their unique properties. Among the wide range of optoelectronic devices some important characteristics of solar cell and laser have been studied ex...

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Format: Thesis
Language:English
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Online Access:http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/72234/1/Page%201-24.pdf
http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/72234/2/Full%20text.pdf
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