Performance improvement of optoelectronic devices using Group III Nitride based quantum dot
Quantum dot has become a subject of incredible interest in the field of semiconductor optoelectronic device design for the researchers due to some of their unique properties. Among the wide range of optoelectronic devices some important characteristics of solar cell and laser have been studied ex...
Saved in:
Format: | Thesis |
---|---|
Language: | English |
Subjects: | |
Online Access: | http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/72234/1/Page%201-24.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/72234/2/Full%20text.pdf |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Synthesis and characterization of soluble conducting polymers for optoelectronic applications /
by: Adebayo, Hammed Wasiu
Published: (2017) -
Multicolor infrared detection using step quantum wells /
by: Mei, Ting
Published: (1999) -
Kesan saiz dan surfaktan keatas sifat struktur, elektronik dan optik bagi noktah kuantum silikon berasaskan teori fungsian ketumpatan /
by: Muhammad Mus-'Ab Mohd Anas -
Optical and structural study of advanced optoelectronic and electronic materials and microstructure /
by: Chang, Wenyi
Published: (2002) -
Synthesis and optical properties of PbS/MnS core shell quantum dots
by: Zaini, Muhammad Safwan
Published: (2019)