Synthesis and characterization of Cu₂Zn₁-xCdxSnS₄ quinternary alloy structure nanostructures using sol-gel electrospining technique
The principal aim of the research work presented in this thesis is to synthesise nanostructured Cu2Zn1-xCdxSnS4with different Cd concentrations (x=0 to 1)on glass, porous silicon (PS), oxidized silicon (SiO2) and GaN substratesusing different methods of spin coating and electrospinningtechniquesfor...
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my-unimap-725662022-11-24T04:59:43Z Synthesis and characterization of Cu₂Zn₁-xCdxSnS₄ quinternary alloy structure nanostructures using sol-gel electrospining technique Yarub, Al-Douri, Assoc. Prof. Dr. The principal aim of the research work presented in this thesis is to synthesise nanostructured Cu2Zn1-xCdxSnS4with different Cd concentrations (x=0 to 1)on glass, porous silicon (PS), oxidized silicon (SiO2) and GaN substratesusing different methods of spin coating and electrospinningtechniquesfor heterojunction, solar cell and Dengue type-2 DNA detector applications. In this work, we have studied the different effect copper (Cu) concentrations (0.3, 0.5, 0.7 and 0.9 mol/L) on the structural, morphological, optical and electrical properties of Cu2Zn0.8Cd0.2SnS4 quinternary alloy nanostructures prepared by spin coating technique. The direct band gap of Cu2Zn0.8Cd0.2SnS4quinternary alloy nanostructures decreases as Cu concentration increases from 1.81 eV at 0.3M to 1.60eV at 0.9M. The transmittance value in the range 63-49% was also dependent on Cu concentration. The refractive index and optical dielectric constant are calculated and gave good agreement with experimental and theoretical results. Electrical properties studied by Hall Effect measurement, showed ptype conductivity, with a carrier concentration between 7.819×1012 cm–3 and 3.76×1014 cm-3.It was observed a linear decreasing in the band gap of Cu2Zn1- xCdxSnS4/glassquinternary alloy nanostructures as Cd concentration increases.The transmittance value was 73% at x = 0 and 39% at x = 1. Hall Effect measurements suggest that all the grown nanostructures have p-type conduction. XRD results showed that Cu2Zn1-xCdxSnS4quinternaryalloy nanostructures has multiphase polycrystalline with preferential orientation along (112) and (312) directions with kesterite structure at x=0 and stannite structure at x=1.The Cu2Zn1-xCdxSnS4quinternary alloy nanostructures on PS (63.93%) substrate with different Cd concentration deposited via spin coating technique were successfully examined for heterojunction. The current-tovoltage (I-V) of Ag/n-PS/Cu2Zn1-xCdSnS4/Ag heterojunction at x= 0, 0.6, 1 was characterized. The photosensitivity increases as Cd concentration increases to of (3401.36) for x=0.6 compared with (282.40) for x=0 and (567.68) for x=1 respectively. Different method electrospinningtechnique is used to synthesise of Cu2Zn1- xCdxSnS4quinternaryalloynanofibres. Universiti Malaysia Perlis (UniMAP) Thesis en http://dspace.unimap.edu.my:80/xmlui/handle/123456789/72566 http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/72566/3/license.txt 8a4605be74aa9ea9d79846c1fba20a33 http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/72566/1/Page%201-24.pdf a1c0e858b1a79d01dbae1c813ad046ef http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/72566/2/Full%20text.pdf 8d708c641887943ae6dbe5b220353a67 http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/72566/4/Authman%20Salim.pdf c481de1419f399d749dbfe73148f3b26 Universiti Malaysia Perlis (UniMAP) Electrospinning Nanostructures Photovoltaic power generation Dengue Institute of Nano Electronic Engineering |
| institution |
Universiti Malaysia Perlis |
| collection |
UniMAP Institutional Repository |
| language |
English |
| advisor |
Yarub, Al-Douri, Assoc. Prof. Dr. |
| topic |
Electrospinning Nanostructures Photovoltaic power generation Dengue |
| spellingShingle |
Electrospinning Nanostructures Photovoltaic power generation Dengue Synthesis and characterization of Cu₂Zn₁-xCdxSnS₄ quinternary alloy structure nanostructures using sol-gel electrospining technique |
| description |
The principal aim of the research work presented in this thesis is to synthesise nanostructured Cu2Zn1-xCdxSnS4with different Cd concentrations (x=0 to 1)on glass, porous silicon (PS), oxidized silicon (SiO2) and GaN substratesusing different methods
of spin coating and electrospinningtechniquesfor heterojunction, solar cell and Dengue type-2 DNA detector applications. In this work, we have studied the different effect copper (Cu) concentrations (0.3, 0.5, 0.7 and 0.9 mol/L) on the structural,
morphological, optical and electrical properties of Cu2Zn0.8Cd0.2SnS4 quinternary alloy nanostructures prepared by spin coating technique. The direct band gap of
Cu2Zn0.8Cd0.2SnS4quinternary alloy nanostructures decreases as Cu concentration
increases from 1.81 eV at 0.3M to 1.60eV at 0.9M. The transmittance value in the range
63-49% was also dependent on Cu concentration. The refractive index and optical
dielectric constant are calculated and gave good agreement with experimental and
theoretical results. Electrical properties studied by Hall Effect measurement, showed ptype
conductivity, with a carrier concentration between 7.819×1012 cm–3 and 3.76×1014
cm-3.It was observed a linear decreasing in the band gap of Cu2Zn1-
xCdxSnS4/glassquinternary alloy nanostructures as Cd concentration increases.The
transmittance value was 73% at x = 0 and 39% at x = 1. Hall Effect measurements
suggest that all the grown nanostructures have p-type conduction. XRD results showed
that Cu2Zn1-xCdxSnS4quinternaryalloy nanostructures has multiphase polycrystalline
with preferential orientation along (112) and (312) directions with kesterite structure at
x=0 and stannite structure at x=1.The Cu2Zn1-xCdxSnS4quinternary alloy
nanostructures on PS (63.93%) substrate with different Cd concentration deposited via
spin coating technique were successfully examined for heterojunction. The current-tovoltage
(I-V) of Ag/n-PS/Cu2Zn1-xCdSnS4/Ag heterojunction at x= 0, 0.6, 1 was
characterized. The photosensitivity increases as Cd concentration increases to of
(3401.36) for x=0.6 compared with (282.40) for x=0 and (567.68) for x=1 respectively.
Different method electrospinningtechnique is used to synthesise of Cu2Zn1-
xCdxSnS4quinternaryalloynanofibres. |
| format |
Thesis |
| title |
Synthesis and characterization of Cu₂Zn₁-xCdxSnS₄ quinternary alloy structure nanostructures using sol-gel electrospining technique |
| title_short |
Synthesis and characterization of Cu₂Zn₁-xCdxSnS₄ quinternary alloy structure nanostructures using sol-gel electrospining technique |
| title_full |
Synthesis and characterization of Cu₂Zn₁-xCdxSnS₄ quinternary alloy structure nanostructures using sol-gel electrospining technique |
| title_fullStr |
Synthesis and characterization of Cu₂Zn₁-xCdxSnS₄ quinternary alloy structure nanostructures using sol-gel electrospining technique |
| title_full_unstemmed |
Synthesis and characterization of Cu₂Zn₁-xCdxSnS₄ quinternary alloy structure nanostructures using sol-gel electrospining technique |
| title_sort |
synthesis and characterization of cu₂zn₁-xcdxsns₄ quinternary alloy structure nanostructures using sol-gel electrospining technique |
| granting_institution |
Universiti Malaysia Perlis (UniMAP) |
| granting_department |
Institute of Nano Electronic Engineering |
| url |
http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/72566/1/Page%201-24.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/72566/2/Full%20text.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/72566/4/Authman%20Salim.pdf |
| _version_ |
1776104223227772928 |