The optimization of P-i-N power switching diode in term of reverse breakdown voltage and electrostatic disharge performance
The Power switching diode (P-i-N diode) is one of the widely used diode in high power semiconductor devices as circuit protection. This popularity comes from excellent reverse voltage blocking and better electrostatic discharge (ESD) performance. As a result, the exploration on the P-i-N power sw...
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| Format: | Thesis |
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| Language: | English |
| Subjects: | |
| Online Access: | http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/76629/1/Page%201-24.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/76629/2/Full%20text.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/76629/3/Declaration%20Form.pdf |
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| Summary: | The Power switching diode (P-i-N diode) is one of the widely used diode in high power
semiconductor devices as circuit protection. This popularity comes from excellent
reverse voltage blocking and better electrostatic discharge (ESD) performance. As a
result, the exploration on the P-i-N power switching diode to make the device more
robust and competitive in the market is boundless, which aims for continuous
improvement on the electrical characteristics. In this thesis, the design structure of P-i-N
power switching diode consist of a circular shape anode junction, an n-type bulk
substrate and the epitaxial layer of silicon substrate that represent the intrinsic region is
used. Two different type of reverse breakdown voltage range P-i-N power switching
diode are discussed in this thesis which is 250 V and 300 V. Independently, the
optimization of reverse breakdown voltage and ESD respectively is conducted using
250 V and 300 V respectively as both diode have different good and poor electrical
performance. The improvement of both diodes are performed by process simulation and
as well as the confirmation by the design of experiment (DOE) of physical wafers
fabrication process. For the ESD analysis, the devices are then subjected to nondestructive
and destructive test of the fabricated diodes. Initially, this thesis describes
the research work to widen the operating range of the 250 V P-i-N power switching
avalanche diodes that can be operated more than 300 V by exploring the effects of the
thickness and resistivity of epitaxial layer during forward and reverse biasing. Purpose
of widen the operating range is to be used in power distribution application instead of
telecommunication application. The result shows that, the changes on a P-i-N type
structure of the power switching avalanche diode can increase the reverse breakdown
voltage performance to ~500 V, which is beyond 300 V during reverse bias. The
improvement of reverse breakdown voltage is more than 65% from 250 V. In addition
to the electrical characteristics operating range improvement in the thesis, the study of
ESD improvement of 300 V reverse breakdown voltage P-i-N diode is demonstrated. A
better ESD performance of the P-i-N diode is also achieved by changing the
characteristic profile of the P+ anode junction of P-i-N diode. The characteristics
profiles are altered by lightening the dopant concentration and increasing the depth of
the P-i-N diode junction. It is found that, the 300V P-i-N power switching diode can
sustain more than 1 kV during ESD Human Body Modal (HBM) surge test (400%
higher from initial surge) and more than 400 V during ESD Machine Modal (MM)
surge test (100% higher from initial surge). |
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