The optimization of P-i-N power switching diode in term of reverse breakdown voltage and electrostatic disharge performance

The Power switching diode (P-i-N diode) is one of the widely used diode in high power semiconductor devices as circuit protection. This popularity comes from excellent reverse voltage blocking and better electrostatic discharge (ESD) performance. As a result, the exploration on the P-i-N power sw...

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Format: Thesis
Language:English
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Online Access:http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/76629/1/Page%201-24.pdf
http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/76629/2/Full%20text.pdf
http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/76629/3/Declaration%20Form.pdf
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