Synthesis and characterization of high dielectric constant material based on Er-doped BaTiO3 for capacitor applications

High dielectric constant material becomes an important parameter to be used as capacitor for storage in most electronic devices due to miniaturization trend of smart devices and electronic gadgets. BaTiO3 was used in this study as it was reported to have a high dielectric constant (εr= 4000-10000...

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Format:	Thesis
Language:	English
Subjects:	Energy storage Miniature electronic equipment Capacitors Dielectric devices Barium metatitanate
Online Access:	http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/77424/1/Page%201-24.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/77424/2/Full%20text.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/77424/3/Declaration%20Form.pdf
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spelling	my-unimap-774242022-12-07T01:19:45Z Synthesis and characterization of high dielectric constant material based on Er-doped BaTiO3 for capacitor applications Rozana Aina, Maulat Osman, Dr. High dielectric constant material becomes an important parameter to be used as capacitor for storage in most electronic devices due to miniaturization trend of smart devices and electronic gadgets. BaTiO3 was used in this study as it was reported to have a high dielectric constant (εr= 4000-10000) at Curie temperature (TC) around 110˚C. Furthermore, it was reported that by doping Erbium (Er) into BaTiO3, it can improve the dielectric properties of BaTiO3. BaTiO3 and Er-doped BaTiO3 with composition of Ba1-xErxTiO3 in the range of (0 ≤ x ≤ 0.01) have been synthesized via conventional solid state reaction method. The characterizations of these compositions were made using X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM) analysis and Impedance Analyzer analysis. XRD analysis shows that BaTiO3 and Er-doped BaTiO3 has phase pure after heating at 1400˚C. Both BaTiO3 and Er-doped BaTiO3 exhibit tetragonal structure with space group of P4mm. Solid solution limit of Er-doped BaTiO3 composition is beyond x=0.01. For structural analysis, Rietveld refinement analysis were done on BaTiO3 for 5 models (A, B, C, D and E) to find the suitable atomic position with low 2 value to be used as standard model to refine other Er-doped BaTiO3 samples. Model C is the best model with low 2 value of 3.808. With Rietveld refinement analysis, study on incorporation of Er into the A-site and B-site of perovskite ABO3 structure was done. The result indicates that Er can be at both side either A or B site because of the 2 value that is very similar. For microstructural analysis, SEM was used to study the grain size effect by doping Er into BaTiO3. The smallest grain size for Ba1-xErxTiO3 was 3.76 m at x=0.0075. For electrical properties, the composition of Ba1-xErxTiO3 at x=0.0075 has the highest dielectric constant value, εr= ~ 6500 as compared to pure BaTiO3 with dielectric constant value, εr= ~ 5200. Instead of that, the sample at x=0.0075 has low dielectric loss with value less than 0.1. The highest capacitance value for x=0.0075 at the highest dielectric constant value is C= ~4 x 10-9 Fcm-1 with total conductivity, ζ= 4 x 10-7Scm-1. The Capacitance-Voltage (C-V) characteristic were measured from 0 to 30 V and all the samples show a high capacitance by increasing the voltage up to 30 V with no signal of breakdown region. The sample with the highest dielectric constant, low loss and good C-V characteristic is the sample with x= 0.0075. Universiti Malaysia Perlis (UniMAP) Thesis en http://dspace.unimap.edu.my:80/xmlui/handle/123456789/77424 http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/77424/4/license.txt 8a4605be74aa9ea9d79846c1fba20a33 http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/77424/1/Page%201-24.pdf 196e63dbab42a8a55f097c56e4ba3796 http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/77424/2/Full%20text.pdf 98c8059eccb8a7546c23d049666d87a8 http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/77424/3/Declaration%20Form.pdf ba06d39f2eec28b6bbddc487631dd07e Universiti Malaysia Perlis (UniMAP) Energy storage Miniature electronic equipment Capacitors Dielectric devices Barium metatitanate School of Microelectronic Engineering
institution	Universiti Malaysia Perlis
collection	UniMAP Institutional Repository
language	English
advisor	Rozana Aina, Maulat Osman, Dr.
topic	Energy storage Miniature electronic equipment Capacitors Dielectric devices Barium metatitanate
spellingShingle	Energy storage Miniature electronic equipment Capacitors Dielectric devices Barium metatitanate Synthesis and characterization of high dielectric constant material based on Er-doped BaTiO3 for capacitor applications
description	High dielectric constant material becomes an important parameter to be used as capacitor for storage in most electronic devices due to miniaturization trend of smart devices and electronic gadgets. BaTiO3 was used in this study as it was reported to have a high dielectric constant (εr= 4000-10000) at Curie temperature (TC) around 110˚C. Furthermore, it was reported that by doping Erbium (Er) into BaTiO3, it can improve the dielectric properties of BaTiO3. BaTiO3 and Er-doped BaTiO3 with composition of Ba1-xErxTiO3 in the range of (0 ≤ x ≤ 0.01) have been synthesized via conventional solid state reaction method. The characterizations of these compositions were made using X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM) analysis and Impedance Analyzer analysis. XRD analysis shows that BaTiO3 and Er-doped BaTiO3 has phase pure after heating at 1400˚C. Both BaTiO3 and Er-doped BaTiO3 exhibit tetragonal structure with space group of P4mm. Solid solution limit of Er-doped BaTiO3 composition is beyond x=0.01. For structural analysis, Rietveld refinement analysis were done on BaTiO3 for 5 models (A, B, C, D and E) to find the suitable atomic position with low 2 value to be used as standard model to refine other Er-doped BaTiO3 samples. Model C is the best model with low 2 value of 3.808. With Rietveld refinement analysis, study on incorporation of Er into the A-site and B-site of perovskite ABO3 structure was done. The result indicates that Er can be at both side either A or B site because of the 2 value that is very similar. For microstructural analysis, SEM was used to study the grain size effect by doping Er into BaTiO3. The smallest grain size for Ba1-xErxTiO3 was 3.76 m at x=0.0075. For electrical properties, the composition of Ba1-xErxTiO3 at x=0.0075 has the highest dielectric constant value, εr= ~ 6500 as compared to pure BaTiO3 with dielectric constant value, εr= ~ 5200. Instead of that, the sample at x=0.0075 has low dielectric loss with value less than 0.1. The highest capacitance value for x=0.0075 at the highest dielectric constant value is C= ~4 x 10-9 Fcm-1 with total conductivity, ζ= 4 x 10-7Scm-1. The Capacitance-Voltage (C-V) characteristic were measured from 0 to 30 V and all the samples show a high capacitance by increasing the voltage up to 30 V with no signal of breakdown region. The sample with the highest dielectric constant, low loss and good C-V characteristic is the sample with x= 0.0075.
format	Thesis
title	Synthesis and characterization of high dielectric constant material based on Er-doped BaTiO3 for capacitor applications
title_short	Synthesis and characterization of high dielectric constant material based on Er-doped BaTiO3 for capacitor applications
title_full	Synthesis and characterization of high dielectric constant material based on Er-doped BaTiO3 for capacitor applications
title_fullStr	Synthesis and characterization of high dielectric constant material based on Er-doped BaTiO3 for capacitor applications
title_full_unstemmed	Synthesis and characterization of high dielectric constant material based on Er-doped BaTiO3 for capacitor applications
title_sort	synthesis and characterization of high dielectric constant material based on er-doped batio3 for capacitor applications
granting_institution	Universiti Malaysia Perlis (UniMAP)
granting_department	School of Microelectronic Engineering
url	http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/77424/1/Page%201-24.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/77424/2/Full%20text.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/77424/3/Declaration%20Form.pdf
_version_	1776104276791132160

Synthesis and characterization of high dielectric constant material based on Er-doped BaTiO3 for capacitor applications

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