Design of 200V n-type superjunction lateral insulated gate bipolar transistor on partial silicon on insulator

Lateral insulated-gate bipolar transistors (LIGBTs) have long been proposed for use in integrated Power Integrated Circuits (PICs). LIGBTs can be fabricated on either bulk silicon substrate or silicon-on-insulator (SOl). The later have been favored by most Integrated PICs due to its superior isol...

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Main Author:	Kho, Elizabeth Ching Tee
Format:	Thesis
Language:	English
Published:	2014
Subjects:	TK Electrical engineering Electronics Nuclear engineering
Online Access:	http://ir.unimas.my/id/eprint/14281/1/Elizabeth.pdf
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spelling	my-unimas-ir.142812023-06-15T06:48:42Z Design of 200V n-type superjunction lateral insulated gate bipolar transistor on partial silicon on insulator 2014 Kho, Elizabeth Ching Tee TK Electrical engineering. Electronics Nuclear engineering Lateral insulated-gate bipolar transistors (LIGBTs) have long been proposed for use in integrated Power Integrated Circuits (PICs). LIGBTs can be fabricated on either bulk silicon substrate or silicon-on-insulator (SOl). The later have been favored by most Integrated PICs due to its superior isolation. However, there are some weaknesses associated with SOl LIGBTs such as reduced Reduce Surface Field (RESURF) effect, higher forward voltage drop (VON), more severe self heating as weU as undesired back-gate and side-gate impacts. The partial SOl (PSOI) concept is subsequently proposed to improve the existing weaknesses in SOl technology such as alleviates the crowding effect of the electrical potential lines in the confined silicon and dissipates the heat more effectivelj For most high voltage (HY) double-diffused metal-ox ide-semiconductor field effect transistor (OMOS) structures, RESURF is the main concept applied to optimize the trade-off in getting high breakdown voltage (BY) and low specific on resistance (RON). The introduction of superjunction concept featuring alternating nand p layers in the drift region proved to be effective in breaking the 'silicon limit' and resulted in drastically reduced RON DMOS. A charge baJanced superjunction allows the depletion of the entire drift region happens at a lower voltage which yields a uniform electric field distribution. The superjunction concept with nand p layers arranged in the device width direction was later extended into both discrete IGBTs and LIGBTs. The main motivation of this research is to design and realize a LIGBT that combines the superjunction with nand p layers arranged in lateral direction approach with the PSOI concept. To realize the superjunction LIGBT, a minimum one additional mask layer is added to the O.18f..lm partial SOl HV process. This work presents and delivers a novel superjunction LIGBT with BV of 220V, Von of 1.55V, 1.75V and 2.30V at 100Ncm2, l50Ncm2 and 300A/cm2 respectiveJy. The measured turn-off time is 130ns under clamped inductive switching circuit. The device is also evaluated at higher temperature and found to have negligible VON increase with the increase of temperature up to 448K. This research work well proving the success in combining the superjunction and partial SOl into a LlGBT device. Universiti Malaysia Sarawak (UNIMAS) 2014 Thesis http://ir.unimas.my/id/eprint/14281/ http://ir.unimas.my/id/eprint/14281/1/Elizabeth.pdf text en validuser phd doctoral Universiti Malaysia Sarawak Faculty of Engineering
institution	Universiti Malaysia Sarawak
collection	UNIMAS Institutional Repository
language	English
topic	TK Electrical engineering Electronics Nuclear engineering
spellingShingle	TK Electrical engineering Electronics Nuclear engineering Kho, Elizabeth Ching Tee Design of 200V n-type superjunction lateral insulated gate bipolar transistor on partial silicon on insulator
description	Lateral insulated-gate bipolar transistors (LIGBTs) have long been proposed for use in integrated Power Integrated Circuits (PICs). LIGBTs can be fabricated on either bulk silicon substrate or silicon-on-insulator (SOl). The later have been favored by most Integrated PICs due to its superior isolation. However, there are some weaknesses associated with SOl LIGBTs such as reduced Reduce Surface Field (RESURF) effect, higher forward voltage drop (VON), more severe self heating as weU as undesired back-gate and side-gate impacts. The partial SOl (PSOI) concept is subsequently proposed to improve the existing weaknesses in SOl technology such as alleviates the crowding effect of the electrical potential lines in the confined silicon and dissipates the heat more effectivelj For most high voltage (HY) double-diffused metal-ox ide-semiconductor field effect transistor (OMOS) structures, RESURF is the main concept applied to optimize the trade-off in getting high breakdown voltage (BY) and low specific on resistance (RON). The introduction of superjunction concept featuring alternating nand p layers in the drift region proved to be effective in breaking the 'silicon limit' and resulted in drastically reduced RON DMOS. A charge baJanced superjunction allows the depletion of the entire drift region happens at a lower voltage which yields a uniform electric field distribution. The superjunction concept with nand p layers arranged in the device width direction was later extended into both discrete IGBTs and LIGBTs. The main motivation of this research is to design and realize a LIGBT that combines the superjunction with nand p layers arranged in lateral direction approach with the PSOI concept. To realize the superjunction LIGBT, a minimum one additional mask layer is added to the O.18f..lm partial SOl HV process. This work presents and delivers a novel superjunction LIGBT with BV of 220V, Von of 1.55V, 1.75V and 2.30V at 100Ncm2, l50Ncm2 and 300A/cm2 respectiveJy. The measured turn-off time is 130ns under clamped inductive switching circuit. The device is also evaluated at higher temperature and found to have negligible VON increase with the increase of temperature up to 448K. This research work well proving the success in combining the superjunction and partial SOl into a LlGBT device.
format	Thesis
qualification_name	Doctor of Philosophy (PhD.)
qualification_level	Doctorate
author	Kho, Elizabeth Ching Tee
author_facet	Kho, Elizabeth Ching Tee
author_sort	Kho, Elizabeth Ching Tee
title	Design of 200V n-type superjunction lateral insulated gate bipolar transistor on partial silicon on insulator
title_short	Design of 200V n-type superjunction lateral insulated gate bipolar transistor on partial silicon on insulator
title_full	Design of 200V n-type superjunction lateral insulated gate bipolar transistor on partial silicon on insulator
title_fullStr	Design of 200V n-type superjunction lateral insulated gate bipolar transistor on partial silicon on insulator
title_full_unstemmed	Design of 200V n-type superjunction lateral insulated gate bipolar transistor on partial silicon on insulator
title_sort	design of 200v n-type superjunction lateral insulated gate bipolar transistor on partial silicon on insulator
granting_institution	Universiti Malaysia Sarawak
granting_department	Faculty of Engineering
publishDate	2014
url	http://ir.unimas.my/id/eprint/14281/1/Elizabeth.pdf
_version_	1783728156787605504

Design of 200V n-type superjunction lateral insulated gate bipolar transistor on partial silicon on insulator

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