Design of 200V n-type superjunction lateral insulated gate bipolar transistor on partial silicon on insulator
Lateral insulated-gate bipolar transistors (LIGBTs) have long been proposed for use in integrated Power Integrated Circuits (PICs). LIGBTs can be fabricated on either bulk silicon substrate or silicon-on-insulator (SOl). The later have been favored by most Integrated PICs due to its superior isol...
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| 格式: | Thesis |
| 语言: | English |
| 出版: |
2014
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| 主题: | |
| 在线阅读: | http://ir.unimas.my/id/eprint/14281/1/Elizabeth.pdf |
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