Design of 200V n-type superjunction lateral insulated gate bipolar transistor on partial silicon on insulator

Design of 200V n-type superjunction lateral insulated gate bipolar transistor on partial silicon on insulator

Lateral insulated-gate bipolar transistors (LIGBTs) have long been proposed for use in integrated Power Integrated Circuits (PICs). LIGBTs can be fabricated on either bulk silicon substrate or silicon-on-insulator (SOl). The later have been favored by most Integrated PICs due to its superior isol...

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书目详细资料
主要作者:	Kho, Elizabeth Ching Tee
格式:	Thesis
语言:	English
出版:	2014
主题:	TK Electrical engineering Electronics Nuclear engineering
在线阅读:	http://ir.unimas.my/id/eprint/14281/1/Elizabeth.pdf
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