The Temperature Effects of Titanium Dioxide (TiO2) Doped Reduced Graphene Oxide (rGO) for Perovskite Solar Cell Application
Perovskite solar cells (PSC) are evolving in spectacular pace and emerging as the most promising future generation of photovoltaic devices. In the present study, reduced graphene oxide (rGO) is introduced to titanium dioxide (TiO2) as electron transport layer (ETL) in perovskite solar cell (PSC). Ti...
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| Format: | Thesis |
| Language: | English English |
| Published: |
2020
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| Subjects: | |
| Online Access: | http://ir.unimas.my/id/eprint/30681/1/The%20Temperature%20Effects%20of%20Titanium%20Dioxide%20%28TiO2%29%20Doped%20Reduced%20-%2024pgs.pdf http://ir.unimas.my/id/eprint/30681/4/Rafidah%20Kemat%20ft.pdf |
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| Summary: | Perovskite solar cells (PSC) are evolving in spectacular pace and emerging as the most promising future generation of photovoltaic devices. In the present study, reduced graphene oxide (rGO) is introduced to titanium dioxide (TiO2) as electron transport layer (ETL) in perovskite solar cell (PSC). TiO2 doped rGO (TiO2/rGO) was prepared by combining titanium (IV) oxide nanopowder as precursor for TiO2 and chemically reduced graphene oxide for rGO. The TiO2/rGO is varied with different annealing temperature and its effect on TiO2/rGO properties and on electrical performance of PSC is studied. The surface morphologies of TiO2/rGO thin films is characterized via Scanning Electron Microscope (SEM), Atomic Force Microscope (AFM) and X-Ray Diffraction (XRD). Meanwhile, Ultraviolet-visible spectroscopy (UV-Vis) and X-ray Photoelectron Spectroscopy (XPS) are used to characterize the optical properties and chemical bonding respectively. Lastly, (I-V) analysis for electrical properties is performed. Structural and morphological evidences from SEM, AFM and XRD results confirmed that the TiO2/rGO samples existed in anatase phase, rutile phase and the porosity as well as the surface roughness of TiO2/rGO thin films increased as the annealing temperature increased. The absorption spectra and the band gap obtained at 326 nm and 2.48 eV respectively for TiO2/rGO that annealed at 550 ᵒC portraits better performances due to increment in grain size in higher annealing temperature. The formations of Ti-O and Ti-O-C bonds are confirmed from XPS analysis that fastening the rate of electron transfer in PSC. The electrical properties of TiO2/rGO confirming that 550 ᵒC TiO2/rGO has better conductivity at 18.83 × 10-3 S/cm in conjunctions with its performance in optical properties. |
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