Structural, morphological and optical properties of Eu3+ doped ZnO/Zn2SiO4 fabricated via thermal treatment method
The advancement in the electronic display and optical electronics’ technology has made the phosphor field one of the interesting fields to study among researchers. Hence, a lot of new synthesis techniques as well as different starting materials have been used for the fabrication of enhanced phosp...
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| Main Author: | |
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| Format: | Thesis |
| Language: | English |
| Published: |
2021
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| Subjects: | |
| Online Access: | http://psasir.upm.edu.my/id/eprint/104274/1/SUHAIL%20HUZAIFA%20BIN%20JAAFAR%20-%20IR.pdf |
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| Summary: | The advancement in the electronic display and optical electronics’ technology
has made the phosphor field one of the interesting fields to study among
researchers. Hence, a lot of new synthesis techniques as well as different
starting materials have been used for the fabrication of enhanced phosphor. This
research work uses the thermal treatment method to synthesis the Eu3+ doped
ZnO/Zn2SiO4 based composites which undergo calcination process at a
temperature between 600 °C, 700 °C, and 800 °C for 2 h, 3 h and 4 h holding
times. Different parameters or variables have been studied in this work including
the effect of calcination temperature, holding time and Eu3+ concentration on the
structural, morphological and optical characteristics of ZnO/Zn2SiO4 based
composites. The XRD analysis shows the existence of two major phases which
are ZnO and Zn2SiO4 crystals, which are supported by the finding in the FTIR.
The FESEM micrograph show that progress in the calcination temperature and
holding time, affects to the existence of necking-like shape particle. Absorption
humps discovered through UV-Vis spectroscopy reveal that samples at the
higher calcination temperature, holding time and Eu3+ concentration possess
higher absorption intensity. Two types of band gap can be seen from the energy
band gap analysis which occurs from ZnO crystal and Zn2SiO4 crystal progress.
It is also discovered that the Zn2SiO4 crystal (5.345 to 4.182 eV) has a higher
band gap compared to the ZnO crystal (3.217 to 3.176 eV). While, for the
photoluminescence study, the emission spectra show higher calcination holding
time exhibit higher emission intensity with 700 °C being the optimum
temperature. The emission spectra also show higher concentration of Eu3+ helps
for enhancing the emission intensity until 5 mol% of Eu3+ dopant concentration.
The study findings provide a new and simple method for the fabrication of Eu3+
doped ZnO/Zn2SiO4 based composites for new potential red phosphor
application in the optoelectronic fields. |
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