Potentiostatic, cyclic voltammetric and pulsed electrodeposition of cadmium selenide thin films

Cadmium selenide thin films were electrodeposited on the indium tin oxide (ITO)conducting glass substrate from an electrolyte containing of CdSO4 and SeO2 by potentiostatic (PSD), cyclic voltammeric (CVD) and pulsed lectrodeposition (PED)technique. The cyclic voltammetry experiments were also carrie...

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Main Author:	Ahmad Wazir, Norhidayah
Format:	Thesis
Language:	English
Published:	2010
Subjects:	Cadmium selenide Electroplating Thin films
Online Access:	http://psasir.upm.edu.my/id/eprint/27265/1/FS%202010%2054R.pdf
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spelling	my-upm-ir.272652014-02-28T07:25:41Z Potentiostatic, cyclic voltammetric and pulsed electrodeposition of cadmium selenide thin films 2010-03 Ahmad Wazir, Norhidayah Cadmium selenide thin films were electrodeposited on the indium tin oxide (ITO)conducting glass substrate from an electrolyte containing of CdSO4 and SeO2 by potentiostatic (PSD), cyclic voltammeric (CVD) and pulsed lectrodeposition (PED)technique. The cyclic voltammetry experiments were also carried out to determine the range of potential for deposition of CdSe through potentiostatic and pulse techniques. Potentiostatic electrodeposition experiments have been carried out at varying deposition potential, deposition time and bath temperature. For CVD the effect of varying the number of cycle, scan rate, and deposition at different bath temperature were studied. While the effect of different pulse potential and duty cycles were investigated for PED. X-ray diffraction confirmed that polycrystalline CdSe of hexagonal structure was formed on the ITO substrate for PSD technique, while for CVD and PED technique, mixture of hexagonal and cubic CdSe phase were observed. The films exhibited n-type semiconducting behavior for PSD but p-type for CVD. Heating the sample prepared by CVD at 550°C, removes unwanted selenium element, enhanced the morphology of the film and changed the semiconducting behavior from p-type to n-type. More interesting, as deposited PED films showed both n-type and p-type behavior based on their response to the light illumination. SEM micrograph confirmed the polycrystalline nature of all deposits. In these three techniques, the photoactivity, composition, grain size and shape of the film were found to be dependent on the electrodeposition condition. CdSe thin film was successfully obtained from the mixture of 0.06 M CdSO4 and 0.005 M of SeO2 solution at potential -0.68V vs Ag/AgCl for preparation through PSD. Thicker films were formed at prolong deposition time. The PSD of CdSe was most suitable to be carried out at room temperature. Lower number of cycle and scan rate are preferable for CVD, with potential range between -1.0V to 1.0V. Smooth and well adherent samples were obtained. CVD technique produces selenium rich sample. But the excess of selenium could be eliminated by calcination at 550oC. PED produces smooth and compact films at -0.8V with 50% duty cycles. Among these three techniques, potentiostatic was found to be able to produce nearly stoichiometric of CdSe thin films. The optical absorption studies revealed that all films have direct optical band gap energy values, Eg, in the range of 1.7 to 2.0 eV. Cadmium selenide Electroplating Thin films 2010-03 Thesis http://psasir.upm.edu.my/id/eprint/27265/ http://psasir.upm.edu.my/id/eprint/27265/1/FS%202010%2054R.pdf application/pdf en public masters Universiti Putra Malaysia Cadmium selenide Electroplating Thin films Faculty of Science
institution	Universiti Putra Malaysia
collection	PSAS Institutional Repository
language	English
topic	Cadmium selenide Electroplating Thin films
spellingShingle	Cadmium selenide Electroplating Thin films Ahmad Wazir, Norhidayah Potentiostatic, cyclic voltammetric and pulsed electrodeposition of cadmium selenide thin films
description	Cadmium selenide thin films were electrodeposited on the indium tin oxide (ITO)conducting glass substrate from an electrolyte containing of CdSO4 and SeO2 by potentiostatic (PSD), cyclic voltammeric (CVD) and pulsed lectrodeposition (PED)technique. The cyclic voltammetry experiments were also carried out to determine the range of potential for deposition of CdSe through potentiostatic and pulse techniques. Potentiostatic electrodeposition experiments have been carried out at varying deposition potential, deposition time and bath temperature. For CVD the effect of varying the number of cycle, scan rate, and deposition at different bath temperature were studied. While the effect of different pulse potential and duty cycles were investigated for PED. X-ray diffraction confirmed that polycrystalline CdSe of hexagonal structure was formed on the ITO substrate for PSD technique, while for CVD and PED technique, mixture of hexagonal and cubic CdSe phase were observed. The films exhibited n-type semiconducting behavior for PSD but p-type for CVD. Heating the sample prepared by CVD at 550°C, removes unwanted selenium element, enhanced the morphology of the film and changed the semiconducting behavior from p-type to n-type. More interesting, as deposited PED films showed both n-type and p-type behavior based on their response to the light illumination. SEM micrograph confirmed the polycrystalline nature of all deposits. In these three techniques, the photoactivity, composition, grain size and shape of the film were found to be dependent on the electrodeposition condition. CdSe thin film was successfully obtained from the mixture of 0.06 M CdSO4 and 0.005 M of SeO2 solution at potential -0.68V vs Ag/AgCl for preparation through PSD. Thicker films were formed at prolong deposition time. The PSD of CdSe was most suitable to be carried out at room temperature. Lower number of cycle and scan rate are preferable for CVD, with potential range between -1.0V to 1.0V. Smooth and well adherent samples were obtained. CVD technique produces selenium rich sample. But the excess of selenium could be eliminated by calcination at 550oC. PED produces smooth and compact films at -0.8V with 50% duty cycles. Among these three techniques, potentiostatic was found to be able to produce nearly stoichiometric of CdSe thin films. The optical absorption studies revealed that all films have direct optical band gap energy values, Eg, in the range of 1.7 to 2.0 eV.
format	Thesis
qualification_level	Master's degree
author	Ahmad Wazir, Norhidayah
author_facet	Ahmad Wazir, Norhidayah
author_sort	Ahmad Wazir, Norhidayah
title	Potentiostatic, cyclic voltammetric and pulsed electrodeposition of cadmium selenide thin films
title_short	Potentiostatic, cyclic voltammetric and pulsed electrodeposition of cadmium selenide thin films
title_full	Potentiostatic, cyclic voltammetric and pulsed electrodeposition of cadmium selenide thin films
title_fullStr	Potentiostatic, cyclic voltammetric and pulsed electrodeposition of cadmium selenide thin films
title_full_unstemmed	Potentiostatic, cyclic voltammetric and pulsed electrodeposition of cadmium selenide thin films
title_sort	potentiostatic, cyclic voltammetric and pulsed electrodeposition of cadmium selenide thin films
granting_institution	Universiti Putra Malaysia
granting_department	Faculty of Science
publishDate	2010
url	http://psasir.upm.edu.my/id/eprint/27265/1/FS%202010%2054R.pdf
_version_	1747811584120455168

Potentiostatic, cyclic voltammetric and pulsed electrodeposition of cadmium selenide thin films

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