Fabrication and simulation of lithographically defined junctionless lateral gate silicon nanowire transistors

Fabrication and simulation of lithographically defined junctionless lateral gate silicon nanowire transistors

Nowadays most of the industrial technology in fabrication of transistors is based on the use of semiconductor junctions. Because of the laws of diffusion and the statistical nature of the distribution of the doping atoms in the semiconductor, the formation of ultra-shallow junctions with high doping...

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書目詳細資料
主要作者:	Larki, Farhad
格式:	Thesis
出版:	2012
主題:	Lithography Transistors Nanolithography
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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