Hot Carrier Studies on Heterostructure Silicon Germanium P-Channel Metal Oxide Semiconductor Field Effect Transistor

Hot Carrier Studies on Heterostructure Silicon Germanium P-Channel Metal Oxide Semiconductor Field Effect Transistor

This study examines the susceptibility of hot carrier effects on various Heterostructures Silicon Germanium P-Channel Metal Oxide Semiconductor Field Effect Transistor (SiGe PMOSFET) such as Strained SiGe Channel and Strained SiGe Source/Drain PMOSFET. The results were compared with Si Channel PMOSF...

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书目详细资料
主要作者:	Gan, Kenny Chye Siong
格式:	Thesis
语言:	English English
出版:	2004
主题:	Transistors Silicon (Electric properties)
在线阅读:	http://psasir.upm.edu.my/id/eprint/528/1/549631_FK_2004_89.pdf
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