Hot Carrier Studies on Heterostructure Silicon Germanium P-Channel Metal Oxide Semiconductor Field Effect Transistor

This study examines the susceptibility of hot carrier effects on various Heterostructures Silicon Germanium P-Channel Metal Oxide Semiconductor Field Effect Transistor (SiGe PMOSFET) such as Strained SiGe Channel and Strained SiGe Source/Drain PMOSFET. The results were compared with Si Channel PMOSF...

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Bibliographic Details
Main Author: Gan, Kenny Chye Siong
Format: Thesis
Language:English
English
Published: 2004
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Online Access:http://psasir.upm.edu.my/id/eprint/528/1/549631_FK_2004_89.pdf
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