Preparation of tin seleno telluride thin films by potentiostatic and pulse electrodepositon techniques

Deposition of tin seleno telluride thin film on fluorine doped tin oxide (FTO) coated glass was successfully carried out by potentiostatic deposition and pulse electrodeposition methods. The deposition process was done in an acidic bath consisting of Sn-EDTA, Na2SeO3 and TeO2 solutions. Deposition p...

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Main Author:	Chia, Chew Ping
Format:	Thesis
Language:	English
Published:	2015
Subjects:	Electroplating Thin films Thin film devices
Online Access:	http://psasir.upm.edu.my/id/eprint/57067/1/FS%202015%206RR.pdf
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spelling	my-upm-ir.570672017-08-23T04:10:18Z Preparation of tin seleno telluride thin films by potentiostatic and pulse electrodepositon techniques 2015-04 Chia, Chew Ping Deposition of tin seleno telluride thin film on fluorine doped tin oxide (FTO) coated glass was successfully carried out by potentiostatic deposition and pulse electrodeposition methods. The deposition process was done in an acidic bath consisting of Sn-EDTA, Na2SeO3 and TeO2 solutions. Deposition potential was initially determined using cyclic voltammetry (CV), where the CV results indicated that the possible potential range for deposition of tin seleno telluride is between -0.35 V to -0.65 V. In potentiostatic deposition, the effect of deposition potential, annealing temperature,deposition time, bath temperature and bath concentration were studied. Comparison was done based on the results obtained from photoelectrochemical test (PEC) and Xray diffraction (XRD). It was found that tin seleno telluride thin film which was deposited for 40 minutes at -0.40 V in a deposition bath containing 0.010 M Sn-EDTA,0.010 M Na2SeO3 and 0.005 M TeO2 at room temperature exhibited the highest photocurrent and has the good crystallinity. It was also observed that the tin seleno telluride thin film was produced when the sample was annealed at 250 °C. Pulse electrodeposition was carried out for 40 minutes at a potential of -0.40 V vs Ag/AgCl in a solution containing 0.010 M Sn-EDTA, 0.010 M Na2SeO3 and 0.005 M TeO2. The sample was annealed at 250 oC for 30 minutes. The effect of varying duty cycle was studied. PEC and XRD results showed that tin seleno telluride deposited at 50% duty cycle produced a thin film with high crystallinity and good photoresponse. The photocurrent for the thin film deposited using both methods appeared at negative potentials region, revealing the fact that tin seleno telluride is a p-type semiconductor. The XRD results showed that tin seleno telluride (SnSe0.3Te0.7) is polycrystalline with strong cubic structure reflections at (002), (022), (222), (004) and (024) planes. Micrographs obtained from Scanning Electron Microscopy (SEM) showed that the thin film deposited using potentiostatic deposition appeared as non-uniform dendritic crystals where as thin film deposited using pulse electrodeposition appeared as short,rod type loose aggregates at 10 to 50% duty cycle. The thin film obtained from pulse electrodeposition also has better surface coverage compared to the potentiostatic deposition. Data obtained from Energy Dispersive Analysis of X-rays (EDX) revealed that the composition of Sn:Se:Te was 1:5.4:2.8 and 1:7.4:3.5 respectively for both potentiostatic and pulse electrodeposition. The crystallite size of tin seleno telluride obtained from pulse electrodeposition is larger than that from potentiostatic deposition. Optical studies showed that the thin film deposited using both deposition methods have a direct band gap transition with band gap value of 1.60 e V. Electroplating Thin films Thin film devices 2015-04 Thesis http://psasir.upm.edu.my/id/eprint/57067/ http://psasir.upm.edu.my/id/eprint/57067/1/FS%202015%206RR.pdf application/pdf en public masters Universiti Putra Malaysia Electroplating Thin films Thin film devices
institution	Universiti Putra Malaysia
collection	PSAS Institutional Repository
language	English
topic	Electroplating Thin films Thin film devices
spellingShingle	Electroplating Thin films Thin film devices Chia, Chew Ping Preparation of tin seleno telluride thin films by potentiostatic and pulse electrodepositon techniques
description	Deposition of tin seleno telluride thin film on fluorine doped tin oxide (FTO) coated glass was successfully carried out by potentiostatic deposition and pulse electrodeposition methods. The deposition process was done in an acidic bath consisting of Sn-EDTA, Na2SeO3 and TeO2 solutions. Deposition potential was initially determined using cyclic voltammetry (CV), where the CV results indicated that the possible potential range for deposition of tin seleno telluride is between -0.35 V to -0.65 V. In potentiostatic deposition, the effect of deposition potential, annealing temperature,deposition time, bath temperature and bath concentration were studied. Comparison was done based on the results obtained from photoelectrochemical test (PEC) and Xray diffraction (XRD). It was found that tin seleno telluride thin film which was deposited for 40 minutes at -0.40 V in a deposition bath containing 0.010 M Sn-EDTA,0.010 M Na2SeO3 and 0.005 M TeO2 at room temperature exhibited the highest photocurrent and has the good crystallinity. It was also observed that the tin seleno telluride thin film was produced when the sample was annealed at 250 °C. Pulse electrodeposition was carried out for 40 minutes at a potential of -0.40 V vs Ag/AgCl in a solution containing 0.010 M Sn-EDTA, 0.010 M Na2SeO3 and 0.005 M TeO2. The sample was annealed at 250 oC for 30 minutes. The effect of varying duty cycle was studied. PEC and XRD results showed that tin seleno telluride deposited at 50% duty cycle produced a thin film with high crystallinity and good photoresponse. The photocurrent for the thin film deposited using both methods appeared at negative potentials region, revealing the fact that tin seleno telluride is a p-type semiconductor. The XRD results showed that tin seleno telluride (SnSe0.3Te0.7) is polycrystalline with strong cubic structure reflections at (002), (022), (222), (004) and (024) planes. Micrographs obtained from Scanning Electron Microscopy (SEM) showed that the thin film deposited using potentiostatic deposition appeared as non-uniform dendritic crystals where as thin film deposited using pulse electrodeposition appeared as short,rod type loose aggregates at 10 to 50% duty cycle. The thin film obtained from pulse electrodeposition also has better surface coverage compared to the potentiostatic deposition. Data obtained from Energy Dispersive Analysis of X-rays (EDX) revealed that the composition of Sn:Se:Te was 1:5.4:2.8 and 1:7.4:3.5 respectively for both potentiostatic and pulse electrodeposition. The crystallite size of tin seleno telluride obtained from pulse electrodeposition is larger than that from potentiostatic deposition. Optical studies showed that the thin film deposited using both deposition methods have a direct band gap transition with band gap value of 1.60 e V.
format	Thesis
qualification_level	Master's degree
author	Chia, Chew Ping
author_facet	Chia, Chew Ping
author_sort	Chia, Chew Ping
title	Preparation of tin seleno telluride thin films by potentiostatic and pulse electrodepositon techniques
title_short	Preparation of tin seleno telluride thin films by potentiostatic and pulse electrodepositon techniques
title_full	Preparation of tin seleno telluride thin films by potentiostatic and pulse electrodepositon techniques
title_fullStr	Preparation of tin seleno telluride thin films by potentiostatic and pulse electrodepositon techniques
title_full_unstemmed	Preparation of tin seleno telluride thin films by potentiostatic and pulse electrodepositon techniques
title_sort	preparation of tin seleno telluride thin films by potentiostatic and pulse electrodepositon techniques
granting_institution	Universiti Putra Malaysia
publishDate	2015
url	http://psasir.upm.edu.my/id/eprint/57067/1/FS%202015%206RR.pdf
_version_	1747812161597472768

Preparation of tin seleno telluride thin films by potentiostatic and pulse electrodepositon techniques

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