Self-biasing multiple-gated-transistors method in designing low-noise amplifier and third-order chebyshev filter

Analog filters and low noise amplifiers (LNAs) are extensively employed in the receiver front-end structure of the CMOS radio frequency (RF) applications. One of the analog filters usually employed in CMOS RF is Gm-C filter which consists of transconductor (Gm or OTA) block and capacitor (C). The OT...

Full description

Saved in:

Bibliographic Details
Main Author:	Abbasi, Arash
Format:	Thesis
Language:	English
Published:	2015
Subjects:
Online Access:	http://psasir.upm.edu.my/id/eprint/99062/1/FK%202015%208%20IR.pdf
Tags:	Add Tag No Tags, Be the first to tag this record!

id	my-upm-ir.99062
record_format	uketd_dc
spelling	my-upm-ir.990622023-01-11T04:14:43Z Self-biasing multiple-gated-transistors method in designing low-noise amplifier and third-order chebyshev filter 2015-06 Abbasi, Arash Analog filters and low noise amplifiers (LNAs) are extensively employed in the receiver front-end structure of the CMOS radio frequency (RF) applications. One of the analog filters usually employed in CMOS RF is Gm-C filter which consists of transconductor (Gm or OTA) block and capacitor (C). The OTA is the main building block of the Gm-C filter that the characteristics of the Gm-C filter is related to its performance. While several techniques are reported to design OTA, its major limitation is its poor linearity and complexity of the design. In addition, the LNA is modified to achieve sufficient linearity, reduce complexity of the design and lower noise figure (NF) to suppress the noise from the first stage of the receiver. In this dissertation, a self-biasing multiple-gated-transistors (MGTR) method is modified to improve the linearity of the OTA and LNA. Self-biasing reduce the complexity of the design and number of components. The basic concept of the MGTR method is utilizing two transistors in order to remove the third-order harmonics of each other. Each of these transistors must be biased in different region. Thus, two external biasing is needed. However, the number of external biasing is reduced by self-biasing modification. The modified method is used to modify an OTA for the Gm-C filter. Then, the Gm-C filter is used by third-order Chebyshev filter to prepare the requirements of direct conversion receiver for digital television (DTV). The modified OTA is designed in 90 nm CMOS technology. The simulation result with two-tone test at 100 MHz center frequency shows that the third-order Chebyshev filter with modified OTA has 8 dBm Input-referred Third-Order Intercept Point (IIP3) improvement compared with the third-order Chebyshev filter with single-gate OTA. The third-order Chebyshev filter with modified OTA is operating between 50-200 MHz cutoff frequencies. Moreover, it achieves maximum NF of 13.5 dB and maximum IIP3 of approximately 17.3 dBm at 100 MHz, whereas consuming 18 mA with 1.2 V supply voltage. Furthermore, the modified LNA is operating between 900-2400 MHz cutoff frequencies. The simulation result with two-tone test at 2.1 GHz sample center frequency shows that the modified LNA has 10 IIP3 improvement compared with a single-gate LNA. The modified LNA achieves maximum NF of 1.9 dB, 9 dB Gain and maximum IIP3 of approximately 13.5 dBm, whereas consuming 3.9 mA with 2 V supply voltage. 2015-06 Thesis http://psasir.upm.edu.my/id/eprint/99062/ http://psasir.upm.edu.my/id/eprint/99062/1/FK%202015%208%20IR.pdf text en public masters Universiti Putra Malaysia Sulaiman, Nasri
institution	Universiti Putra Malaysia
collection	PSAS Institutional Repository
language	English
advisor	Sulaiman, Nasri
topic
spellingShingle	Abbasi, Arash Self-biasing multiple-gated-transistors method in designing low-noise amplifier and third-order chebyshev filter
description	Analog filters and low noise amplifiers (LNAs) are extensively employed in the receiver front-end structure of the CMOS radio frequency (RF) applications. One of the analog filters usually employed in CMOS RF is Gm-C filter which consists of transconductor (Gm or OTA) block and capacitor (C). The OTA is the main building block of the Gm-C filter that the characteristics of the Gm-C filter is related to its performance. While several techniques are reported to design OTA, its major limitation is its poor linearity and complexity of the design. In addition, the LNA is modified to achieve sufficient linearity, reduce complexity of the design and lower noise figure (NF) to suppress the noise from the first stage of the receiver. In this dissertation, a self-biasing multiple-gated-transistors (MGTR) method is modified to improve the linearity of the OTA and LNA. Self-biasing reduce the complexity of the design and number of components. The basic concept of the MGTR method is utilizing two transistors in order to remove the third-order harmonics of each other. Each of these transistors must be biased in different region. Thus, two external biasing is needed. However, the number of external biasing is reduced by self-biasing modification. The modified method is used to modify an OTA for the Gm-C filter. Then, the Gm-C filter is used by third-order Chebyshev filter to prepare the requirements of direct conversion receiver for digital television (DTV). The modified OTA is designed in 90 nm CMOS technology. The simulation result with two-tone test at 100 MHz center frequency shows that the third-order Chebyshev filter with modified OTA has 8 dBm Input-referred Third-Order Intercept Point (IIP3) improvement compared with the third-order Chebyshev filter with single-gate OTA. The third-order Chebyshev filter with modified OTA is operating between 50-200 MHz cutoff frequencies. Moreover, it achieves maximum NF of 13.5 dB and maximum IIP3 of approximately 17.3 dBm at 100 MHz, whereas consuming 18 mA with 1.2 V supply voltage. Furthermore, the modified LNA is operating between 900-2400 MHz cutoff frequencies. The simulation result with two-tone test at 2.1 GHz sample center frequency shows that the modified LNA has 10 IIP3 improvement compared with a single-gate LNA. The modified LNA achieves maximum NF of 1.9 dB, 9 dB Gain and maximum IIP3 of approximately 13.5 dBm, whereas consuming 3.9 mA with 2 V supply voltage.
format	Thesis
qualification_level	Master's degree
author	Abbasi, Arash
author_facet	Abbasi, Arash
author_sort	Abbasi, Arash
title	Self-biasing multiple-gated-transistors method in designing low-noise amplifier and third-order chebyshev filter
title_short	Self-biasing multiple-gated-transistors method in designing low-noise amplifier and third-order chebyshev filter
title_full	Self-biasing multiple-gated-transistors method in designing low-noise amplifier and third-order chebyshev filter
title_fullStr	Self-biasing multiple-gated-transistors method in designing low-noise amplifier and third-order chebyshev filter
title_full_unstemmed	Self-biasing multiple-gated-transistors method in designing low-noise amplifier and third-order chebyshev filter
title_sort	self-biasing multiple-gated-transistors method in designing low-noise amplifier and third-order chebyshev filter
granting_institution	Universiti Putra Malaysia
publishDate	2015
url	http://psasir.upm.edu.my/id/eprint/99062/1/FK%202015%208%20IR.pdf
_version_	1776100285785047040

Self-biasing multiple-gated-transistors method in designing low-noise amplifier and third-order chebyshev filter

Similar Items