Design And Performance Of Laser Structures Based On Group III-Nitrides [QC689.55.S45 T363 2008 f rb].

Design And Performance Of Laser Structures Based On Group III-Nitrides [QC689.55.S45 T363 2008 f rb].

Simulasi peranti bagi ciri elektrik, optik dan terma diod-diod laser (LDs) berasaskan GaN telah dikaji. Bagi laser-laser sedemikian adalah susah memperolehi lapisan penutup-p yang mempunyai ketebalan yang mencukupi, Device simulations for the electrical, optical and thermal characteristics of GaN...

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Main Author: Thahab, Sabah Mresn
Format: Thesis
Language:English
Published: 2008
Subjects:
QC1-999 Physics
Online Access:http://eprints.usm.my/10397/1/DESIGN_AND_PERFORMANCE_OF_LASER.pdf
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spelling my-usm-ep.103972017-03-22T02:23:47Z Design And Performance Of Laser Structures Based On Group III-Nitrides [QC689.55.S45 T363 2008 f rb]. 2008-06 Thahab, Sabah Mresn QC1-999 Physics Simulasi peranti bagi ciri elektrik, optik dan terma diod-diod laser (LDs) berasaskan GaN telah dikaji. Bagi laser-laser sedemikian adalah susah memperolehi lapisan penutup-p yang mempunyai ketebalan yang mencukupi, Device simulations for the electrical, optical and thermal characteristics of GaN-based laser diodes (LDs) have been investigated. It is difficult to obtain pcladding layers with sufficient thickness of high Al composition and high acceptor concentration, 2008-06 Thesis http://eprints.usm.my/10397/ http://eprints.usm.my/10397/1/DESIGN_AND_PERFORMANCE_OF_LASER.pdf application/pdf en public phd doctoral Universiti Sains Malaysia Pusat Pengajian Sains Fizik
institution Universiti Sains Malaysia
collection USM Institutional Repository
language English
topic QC1-999 Physics
spellingShingle QC1-999 Physics
Thahab, Sabah Mresn
Design And Performance Of Laser Structures Based On Group III-Nitrides [QC689.55.S45 T363 2008 f rb].
description Simulasi peranti bagi ciri elektrik, optik dan terma diod-diod laser (LDs) berasaskan GaN telah dikaji. Bagi laser-laser sedemikian adalah susah memperolehi lapisan penutup-p yang mempunyai ketebalan yang mencukupi, Device simulations for the electrical, optical and thermal characteristics of GaN-based laser diodes (LDs) have been investigated. It is difficult to obtain pcladding layers with sufficient thickness of high Al composition and high acceptor concentration,
format Thesis
qualification_name Doctor of Philosophy (PhD.)
qualification_level Doctorate
author Thahab, Sabah Mresn
author_facet Thahab, Sabah Mresn
author_sort Thahab, Sabah Mresn
title Design And Performance Of Laser Structures Based On Group III-Nitrides [QC689.55.S45 T363 2008 f rb].
title_short Design And Performance Of Laser Structures Based On Group III-Nitrides [QC689.55.S45 T363 2008 f rb].
title_full Design And Performance Of Laser Structures Based On Group III-Nitrides [QC689.55.S45 T363 2008 f rb].
title_fullStr Design And Performance Of Laser Structures Based On Group III-Nitrides [QC689.55.S45 T363 2008 f rb].
title_full_unstemmed Design And Performance Of Laser Structures Based On Group III-Nitrides [QC689.55.S45 T363 2008 f rb].
title_sort design and performance of laser structures based on group iii-nitrides [qc689.55.s45 t363 2008 f rb].
granting_institution Universiti Sains Malaysia
granting_department Pusat Pengajian Sains Fizik
publishDate 2008
url http://eprints.usm.my/10397/1/DESIGN_AND_PERFORMANCE_OF_LASER.pdf
_version_ 1747819856370073600

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