PA-MBE GaN-Based Optoelectronics on Silicon Substrates

PA-MBE GaN-Based Optoelectronics on Silicon Substrates

Dalam penyelidikan ini, epitaksi alur molekul berbantukan plasma nitrogen frekuensi radio (RF) digunakan untuk menumbuhkan bahan galium nitrid (GaN) di atas substrat Si(111) dengan penggunaan aluminium nitrid (AlN) yang ditumbuhkan pada suhu tinggi sebagai lapisan penimbal. In this project, radio...

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Main Author: Chuah , Lee Siang
Format: Thesis
Language:English
Published: 2009
Subjects:
QC1 Physics (General)
Online Access:http://eprints.usm.my/15595/1/PA-MBE_GaN-BASED_OPTOELECTRONICS_ON_SILICON_SUBSTRATES.pdf
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spelling my-usm-ep.155952020-01-16T07:23:20Z PA-MBE GaN-Based Optoelectronics on Silicon Substrates 2009 Chuah , Lee Siang QC1 Physics (General) Dalam penyelidikan ini, epitaksi alur molekul berbantukan plasma nitrogen frekuensi radio (RF) digunakan untuk menumbuhkan bahan galium nitrid (GaN) di atas substrat Si(111) dengan penggunaan aluminium nitrid (AlN) yang ditumbuhkan pada suhu tinggi sebagai lapisan penimbal. In this project, radio-frequency (RF) nitrogen plasma-assisted molecular beam epitaxy (PA-MBE) technique was used to grow GaN-based layers on Si(111) substrate using high temperature grown AlN as buffer layer. 2009 Thesis http://eprints.usm.my/15595/ http://eprints.usm.my/15595/1/PA-MBE_GaN-BASED_OPTOELECTRONICS_ON_SILICON_SUBSTRATES.pdf application/pdf en public phd doctoral Universiti Sains Malaysia Pusat Pengajian Sains Fizik
institution Universiti Sains Malaysia
collection USM Institutional Repository
language English
topic QC1 Physics (General)
spellingShingle QC1 Physics (General)
Chuah , Lee Siang
PA-MBE GaN-Based Optoelectronics on Silicon Substrates
description Dalam penyelidikan ini, epitaksi alur molekul berbantukan plasma nitrogen frekuensi radio (RF) digunakan untuk menumbuhkan bahan galium nitrid (GaN) di atas substrat Si(111) dengan penggunaan aluminium nitrid (AlN) yang ditumbuhkan pada suhu tinggi sebagai lapisan penimbal. In this project, radio-frequency (RF) nitrogen plasma-assisted molecular beam epitaxy (PA-MBE) technique was used to grow GaN-based layers on Si(111) substrate using high temperature grown AlN as buffer layer.
format Thesis
qualification_name Doctor of Philosophy (PhD.)
qualification_level Doctorate
author Chuah , Lee Siang
author_facet Chuah , Lee Siang
author_sort Chuah , Lee Siang
title PA-MBE GaN-Based Optoelectronics on Silicon Substrates
title_short PA-MBE GaN-Based Optoelectronics on Silicon Substrates
title_full PA-MBE GaN-Based Optoelectronics on Silicon Substrates
title_fullStr PA-MBE GaN-Based Optoelectronics on Silicon Substrates
title_full_unstemmed PA-MBE GaN-Based Optoelectronics on Silicon Substrates
title_sort pa-mbe gan-based optoelectronics on silicon substrates
granting_institution Universiti Sains Malaysia
granting_department Pusat Pengajian Sains Fizik
publishDate 2009
url http://eprints.usm.my/15595/1/PA-MBE_GaN-BASED_OPTOELECTRONICS_ON_SILICON_SUBSTRATES.pdf
_version_ 1747819873695694848

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