PA-MBE GaN-Based Optoelectronics on Silicon Substrates

PA-MBE GaN-Based Optoelectronics on Silicon Substrates

Dalam penyelidikan ini, epitaksi alur molekul berbantukan plasma nitrogen frekuensi radio (RF) digunakan untuk menumbuhkan bahan galium nitrid (GaN) di atas substrat Si(111) dengan penggunaan aluminium nitrid (AlN) yang ditumbuhkan pada suhu tinggi sebagai lapisan penimbal. In this project, radio...

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書目詳細資料
主要作者:	Chuah , Lee Siang
格式:	Thesis
語言:	English
出版:	2009
主題:	QC1 Physics (General)
在線閱讀:	http://eprints.usm.my/15595/1/PA-MBE_GaN-BASED_OPTOELECTRONICS_ON_SILICON_SUBSTRATES.pdf
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