PA-MBE GaN-Based Optoelectronics on Silicon Substrates
Dalam penyelidikan ini, epitaksi alur molekul berbantukan plasma nitrogen frekuensi radio (RF) digunakan untuk menumbuhkan bahan galium nitrid (GaN) di atas substrat Si(111) dengan penggunaan aluminium nitrid (AlN) yang ditumbuhkan pada suhu tinggi sebagai lapisan penimbal. In this project, radio...
Saved in:
Main Author: | Chuah , Lee Siang |
---|---|
Format: | Thesis |
Language: | English |
Published: |
2009
|
Subjects: | |
Online Access: | http://eprints.usm.my/15595/1/PA-MBE_GaN-BASED_OPTOELECTRONICS_ON_SILICON_SUBSTRATES.pdf |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
A1GaN Thin Films On Silicon Substrates For Photodetector And Transistor Devices
by: Hussein, Asaad Shakir
Published: (2011) -
Electrochemical And Radio Frequency Sputtering Growth Of GaN Nanostructures On Porous Silicon
by: Shamsuddin, Siti Nur Atikah
Published: (2019) -
Polycrystalline GaN Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector
by: Kamarulzaman, Azharul Ariff
Published: (2017) -
DC And RF Characterization Of n-GaN Schottky Diode For Microwave Application
by: Munir, Tariq
Published: (2011) -
Al-Ta2O5-GaN
Semiconductor Device Structure
by: Yeoh, Lai Seng
Published: (2014)