Al-Ta2O5-GaN
Semiconductor Device Structure

Al-Ta2O5-GaN Semiconductor Device Structure

GaN-based semiconductor devices have been extensively investigated for used in high power and high temperature device applications in order to replace Si which is no longer capable to fulfill these ever-increasing demands. The characteristics of low leakage current, low oxide charge density, and...

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书目详细资料
主要作者:	Yeoh, Lai Seng
格式:	Thesis
语言:	English
出版:	2014
主题:	QC1 Physics (General)
在线阅读:	http://eprints.usm.my/28959/1/Al-Ta2O5-GaN_SEMICONDUCTOR_DEVICE_SRTUCTURE.pdf
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