Al-Ta2O5-GaN Semiconductor Device Structure
GaN-based semiconductor devices have been extensively investigated for used in high power and high temperature device applications in order to replace Si which is no longer capable to fulfill these ever-increasing demands. The characteristics of low leakage current, low oxide charge density, and...
Saved in:
| 主要作者: | |
|---|---|
| 格式: | Thesis |
| 语言: | English |
| 出版: |
2014
|
| 主题: | |
| 在线阅读: | http://eprints.usm.my/28959/1/Al-Ta2O5-GaN_SEMICONDUCTOR_DEVICE_SRTUCTURE.pdf |
| 标签: |
添加标签
没有标签, 成为第一个标记此记录!
|