Development Of SiO2 On 4H-SiC By Direct Thermal Oxidation And Post Oxidation Annealing In HNO3 & H2O Vapour

Development Of SiO2 On 4H-SiC By Direct Thermal Oxidation And Post Oxidation Annealing In HNO3 & H2O Vapour

The need to thermally grow a thick SiO2 film (>50 nm) with high breakdown voltage (> 5 MV/cm at 1 uA/cm2) is crucial for high power devices (> 600 V) applications. Keperluan menghasilkan filem tebal SiO2(> 50 nm) dengan keupayaan pecahan voltan yang lebih tinggi (> 5 MV/cm pada 1 uA/...

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Main Author: Banu , Poobalan
Format: Thesis
Language:English
Published: 2014
Subjects:
TN1-997 Mining engineering
Metallurgy
Online Access:http://eprints.usm.my/29000/1/DEVELOPMENT_OF_SiO2_ON_4H-SiC_BY_DIRECT_THERMAL_OXIDATION_AND_POST_OXIDATION_ANNEALING_IN_HNO3_%26_H2O_VAPOUR.pdf
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spelling my-usm-ep.290002019-04-12T05:26:03Z Development Of SiO2 On 4H-SiC By Direct Thermal Oxidation And Post Oxidation Annealing In HNO3 & H2O Vapour 2014 Banu , Poobalan TN1-997 Mining engineering. Metallurgy The need to thermally grow a thick SiO2 film (>50 nm) with high breakdown voltage (> 5 MV/cm at 1 uA/cm2) is crucial for high power devices (> 600 V) applications. Keperluan menghasilkan filem tebal SiO2(> 50 nm) dengan keupayaan pecahan voltan yang lebih tinggi (> 5 MV/cm pada 1 uA/cm2) melalui kaedah pengoksidaan terma adalah sangat penting bagi aplikasi peranti kuasa tinggi (> 600 V). 2014 Thesis http://eprints.usm.my/29000/ http://eprints.usm.my/29000/1/DEVELOPMENT_OF_SiO2_ON_4H-SiC_BY_DIRECT_THERMAL_OXIDATION_AND_POST_OXIDATION_ANNEALING_IN_HNO3_%26_H2O_VAPOUR.pdf application/pdf en public phd doctoral Universiti Sains Malaysia Pusat Pengajian Kejuruteraan Bahan & Sumber Mineral
institution Universiti Sains Malaysia
collection USM Institutional Repository
language English
topic TN1-997 Mining engineering
Metallurgy
spellingShingle TN1-997 Mining engineering
Metallurgy
Banu , Poobalan
Development Of SiO2 On 4H-SiC By Direct Thermal Oxidation And Post Oxidation Annealing In HNO3 & H2O Vapour
description The need to thermally grow a thick SiO2 film (>50 nm) with high breakdown voltage (> 5 MV/cm at 1 uA/cm2) is crucial for high power devices (> 600 V) applications. Keperluan menghasilkan filem tebal SiO2(> 50 nm) dengan keupayaan pecahan voltan yang lebih tinggi (> 5 MV/cm pada 1 uA/cm2) melalui kaedah pengoksidaan terma adalah sangat penting bagi aplikasi peranti kuasa tinggi (> 600 V).
format Thesis
qualification_name Doctor of Philosophy (PhD.)
qualification_level Doctorate
author Banu , Poobalan
author_facet Banu , Poobalan
author_sort Banu , Poobalan
title Development Of SiO2 On 4H-SiC By Direct Thermal Oxidation And Post Oxidation Annealing In HNO3 & H2O Vapour
title_short Development Of SiO2 On 4H-SiC By Direct Thermal Oxidation And Post Oxidation Annealing In HNO3 & H2O Vapour
title_full Development Of SiO2 On 4H-SiC By Direct Thermal Oxidation And Post Oxidation Annealing In HNO3 & H2O Vapour
title_fullStr Development Of SiO2 On 4H-SiC By Direct Thermal Oxidation And Post Oxidation Annealing In HNO3 & H2O Vapour
title_full_unstemmed Development Of SiO2 On 4H-SiC By Direct Thermal Oxidation And Post Oxidation Annealing In HNO3 & H2O Vapour
title_sort development of sio2 on 4h-sic by direct thermal oxidation and post oxidation annealing in hno3 & h2o vapour
granting_institution Universiti Sains Malaysia
granting_department Pusat Pengajian Kejuruteraan Bahan & Sumber Mineral
publishDate 2014
url http://eprints.usm.my/29000/1/DEVELOPMENT_OF_SiO2_ON_4H-SiC_BY_DIRECT_THERMAL_OXIDATION_AND_POST_OXIDATION_ANNEALING_IN_HNO3_%26_H2O_VAPOUR.pdf
_version_ 1747820058239827968

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