Development Of N-Type Spin-On Dopant For Silicon Devices

In this research, works are focused on the preparation of n-type spin-on dopant (SOD) using sol-gel technology. The main aim of this research is to prepare n-type SOD with doping concentration in the range of 1016 to 1020 cm-3. Di dalam penyelidikan ini, kerja-kerja lebih difokuskan kepada penyediaa...

Full description

Saved in:

Bibliographic Details
Main Author:	Ahmad Kamil, Suraya
Format:	Thesis
Language:	English
Published:	2009
Subjects:	QC1-999 Physics
Online Access:	http://eprints.usm.my/29136/1/Development_of_N-type_spin-on_dopant_for_silicon_devices.pdf
Tags:	Add Tag No Tags, Be the first to tag this record!

id	my-usm-ep.29136
record_format	uketd_dc
spelling	my-usm-ep.291362017-03-22T02:23:46Z Development Of N-Type Spin-On Dopant For Silicon Devices 2009 Ahmad Kamil, Suraya QC1-999 Physics In this research, works are focused on the preparation of n-type spin-on dopant (SOD) using sol-gel technology. The main aim of this research is to prepare n-type SOD with doping concentration in the range of 1016 to 1020 cm-3. Di dalam penyelidikan ini, kerja-kerja lebih difokuskan kepada penyediaan pendopan putaran jenis n (SOD) menggunakan teknologi sol-gel. Tujuan utama penyelidikan ini adalah untuk menyediakan SOD dengan kepekatan pendopan di antara 1016 kepada 1020 sm-3. 2009 Thesis http://eprints.usm.my/29136/ http://eprints.usm.my/29136/1/Development_of_N-type_spin-on_dopant_for_silicon_devices.pdf application/pdf en public masters Universiti Sains Malaysia Pusat Pengajian Sains Fizik
institution	Universiti Sains Malaysia
collection	USM Institutional Repository
language	English
topic	QC1-999 Physics
spellingShingle	QC1-999 Physics Ahmad Kamil, Suraya Development Of N-Type Spin-On Dopant For Silicon Devices
description	In this research, works are focused on the preparation of n-type spin-on dopant (SOD) using sol-gel technology. The main aim of this research is to prepare n-type SOD with doping concentration in the range of 1016 to 1020 cm-3. Di dalam penyelidikan ini, kerja-kerja lebih difokuskan kepada penyediaan pendopan putaran jenis n (SOD) menggunakan teknologi sol-gel. Tujuan utama penyelidikan ini adalah untuk menyediakan SOD dengan kepekatan pendopan di antara 1016 kepada 1020 sm-3.
format	Thesis
qualification_level	Master's degree
author	Ahmad Kamil, Suraya
author_facet	Ahmad Kamil, Suraya
author_sort	Ahmad Kamil, Suraya
title	Development Of N-Type Spin-On Dopant For Silicon Devices
title_short	Development Of N-Type Spin-On Dopant For Silicon Devices
title_full	Development Of N-Type Spin-On Dopant For Silicon Devices
title_fullStr	Development Of N-Type Spin-On Dopant For Silicon Devices
title_full_unstemmed	Development Of N-Type Spin-On Dopant For Silicon Devices
title_sort	development of n-type spin-on dopant for silicon devices
granting_institution	Universiti Sains Malaysia
granting_department	Pusat Pengajian Sains Fizik
publishDate	2009
url	http://eprints.usm.my/29136/1/Development_of_N-type_spin-on_dopant_for_silicon_devices.pdf
_version_	1747820090731003904

Development Of N-Type Spin-On Dopant For Silicon Devices

Similar Items