Carbon Doped Silicon Dioxide Low K Dielectric Material.[QC585.75.S55 L732 2004 f rb][Microfiche 7649]

Objektif kajian ini adalah untuk mengkaji keberkesanan mendopkan sebatian karbon keatas SiO2 untuk menghasilkan bahan dielektrik k rendah. The semiconductor industry is entering a new millennium where scientists and engineers are continuing to search for the ideal dielectric material for future c...

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Main Author: Lim, Alex Ying Kiat
Format: Thesis
Language:English
Published: 2004
Subjects:
Online Access:http://eprints.usm.my/3087/1/QC585.75.S55_L732_2004_f_rb-Carbon_doped_silicon_dioxide_low_K_dielectric_material-_by_Alex_Lim_Ying_Kiat-Fizik-Microfiche_7649.pdf
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record_format uketd_dc
spelling my-usm-ep.30872017-03-22T02:23:56Z Carbon Doped Silicon Dioxide Low K Dielectric Material.[QC585.75.S55 L732 2004 f rb][Microfiche 7649] 2004-03 Lim, Alex Ying Kiat QC501-766 Electricity and magnetism Objektif kajian ini adalah untuk mengkaji keberkesanan mendopkan sebatian karbon keatas SiO2 untuk menghasilkan bahan dielektrik k rendah. The semiconductor industry is entering a new millennium where scientists and engineers are continuing to search for the ideal dielectric material for future chip fabrication. 2004-03 Thesis http://eprints.usm.my/3087/ http://eprints.usm.my/3087/1/QC585.75.S55_L732_2004_f_rb-Carbon_doped_silicon_dioxide_low_K_dielectric_material-_by_Alex_Lim_Ying_Kiat-Fizik-Microfiche_7649.pdf application/pdf en public masters Universiti Sains Malaysia Pusat Pengajian Sains Fizik
institution Universiti Sains Malaysia
collection USM Institutional Repository
language English
topic QC501-766 Electricity and magnetism
spellingShingle QC501-766 Electricity and magnetism
Lim, Alex Ying Kiat
Carbon Doped Silicon Dioxide Low K Dielectric Material.[QC585.75.S55 L732 2004 f rb][Microfiche 7649]
description Objektif kajian ini adalah untuk mengkaji keberkesanan mendopkan sebatian karbon keatas SiO2 untuk menghasilkan bahan dielektrik k rendah. The semiconductor industry is entering a new millennium where scientists and engineers are continuing to search for the ideal dielectric material for future chip fabrication.
format Thesis
qualification_level Master's degree
author Lim, Alex Ying Kiat
author_facet Lim, Alex Ying Kiat
author_sort Lim, Alex Ying Kiat
title Carbon Doped Silicon Dioxide Low K Dielectric Material.[QC585.75.S55 L732 2004 f rb][Microfiche 7649]
title_short Carbon Doped Silicon Dioxide Low K Dielectric Material.[QC585.75.S55 L732 2004 f rb][Microfiche 7649]
title_full Carbon Doped Silicon Dioxide Low K Dielectric Material.[QC585.75.S55 L732 2004 f rb][Microfiche 7649]
title_fullStr Carbon Doped Silicon Dioxide Low K Dielectric Material.[QC585.75.S55 L732 2004 f rb][Microfiche 7649]
title_full_unstemmed Carbon Doped Silicon Dioxide Low K Dielectric Material.[QC585.75.S55 L732 2004 f rb][Microfiche 7649]
title_sort carbon doped silicon dioxide low k dielectric material.[qc585.75.s55 l732 2004 f rb][microfiche 7649]
granting_institution Universiti Sains Malaysia
granting_department Pusat Pengajian Sains Fizik
publishDate 2004
url http://eprints.usm.my/3087/1/QC585.75.S55_L732_2004_f_rb-Carbon_doped_silicon_dioxide_low_K_dielectric_material-_by_Alex_Lim_Ying_Kiat-Fizik-Microfiche_7649.pdf
_version_ 1747819664254173184