Carbon Doped Silicon Dioxide Low K Dielectric Material.[QC585.75.S55 L732 2004 f rb][Microfiche 7649]

Objektif kajian ini adalah untuk mengkaji keberkesanan mendopkan sebatian karbon keatas SiO2 untuk menghasilkan bahan dielektrik k rendah. The semiconductor industry is entering a new millennium where scientists and engineers are continuing to search for the ideal dielectric material for future c...

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Bibliographic Details
Main Author: Lim, Alex Ying Kiat
Format: Thesis
Published: 2004
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