Carbon Doped Silicon Dioxide Low K Dielectric Material.[QC585.75.S55 L732 2004 f rb][Microfiche 7649]

Carbon Doped Silicon Dioxide Low K Dielectric Material.[QC585.75.S55 L732 2004 f rb][Microfiche 7649]

Objektif kajian ini adalah untuk mengkaji keberkesanan mendopkan sebatian karbon keatas SiO2 untuk menghasilkan bahan dielektrik k rendah. The semiconductor industry is entering a new millennium where scientists and engineers are continuing to search for the ideal dielectric material for future c...

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書目詳細資料
主要作者:	Lim, Alex Ying Kiat
格式:	Thesis
語言:	English
出版:	2004
主題:	QC501-766 Electricity and magnetism
在線閱讀:	http://eprints.usm.my/3087/1/QC585.75.S55_L732_2004_f_rb-Carbon_doped_silicon_dioxide_low_K_dielectric_material-_by_Alex_Lim_Ying_Kiat-Fizik-Microfiche_7649.pdf
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